关于具有双掺杂源漏的单晶体管同或门的研究  

Study on Single Transistor XNOR Gate with Double DopedSource and Drain

作　　者：杨敏 靳晓诗[1] YANG Min;JIN Xiaoshi(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2023年第4期12-14,共3页Microprocessors

摘　　要：为优化传统可重构场效应晶体管以改善器件的正向电流参数,提出一种双掺杂源漏可重构场效应晶体管。该器件可作为突触器件应用于二值神经网络的同或操作中。器件通过对源区和漏区进行重掺杂使其与金属源漏电极之间形成势垒更窄的欧姆接触,从而使器件的正向电流得到大幅提高。通过分析器件的结构及工作原理,仿真并对比传统RFET和所提出的DDSD-RFET的转移特性曲线,结果表明双掺杂源漏的设计可以有效提高器件的正向电流,同时减少反向截止电流。In order to optimize the traditional reconfigurable field effect transistor and improve the forward current parameters of the device,a double doped source-drain RFET is proposed.The device can be used as a synaptic device in the exclusive-OR operation of binary neural networks.By heavily doping the source region and the drain region,the device forms an ohmic contact with a narrower potential barrier with the metal source and drain electrode,so that the forward current of the device is greatly improved.By analyzing the structure and working principle of the device,the transfer characteristic curves of the traditional RFET and the proposed DDSD-RFET are simulated and compared.The results show that the design of double doped source and drain can effectively improve the forward current of the device and reduce the reverse cut-off current.

关 键 词：可重构场效应晶体管 双掺杂源漏 同或门 高集成 

分 类 号：TN386[电子电信—物理电子学]