Ni掺杂β-Ga_(2)O_(3)单晶的光、电特性研究  

Optical and Electrical Properties of Ni-Doped β-Ga_(2)O_(3) Single Crystal

作　　者：陈绍华 穆文祥[1] 张晋[1] 董旭阳 李阳[1] 贾志泰[1,2] 陶绪堂 CHEN Shaohua;MU Wenxiang;ZHANG Jin;DONG Xuyang;LI Yang;JIA Zhitai;TAO Xutang(State Key Laboratory of Crystal Materials,Institute of Novel Semiconductors,Shandong University,Jinan 250100,China;Shandong Research Institute of Industrial Technology,Jinan 250100,China)

机构地区：[1]山东大学,新一代半导体材料研究院,晶体材料国家重点实验室,济南250100 [2]山东工业技术研究院,济南250100

出　　处：《人工晶体学报》2023年第8期1373-1377,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(52002219,51932004,61975098);广东省重点领域研发计划(2020B010174002);深圳市基础研究计划(JCYJ20210324132014038);111工程2.0(BP2018013)。

摘　　要：本文使用导模(EFG)法生长了Ni掺杂β-Ga_(2)O_(3)单晶,并通过粉末X射线衍射(PXRD)和劳厄衍射(Laue diffraction)分别验证了其晶体结构和晶体质量。进一步通过紫外-可见-近红外透过光谱及红外透过光谱研究了Ni^(2+)掺杂对β-Ga_(2)O_(3)光学特性的影响,发现其(100)面的紫外截止边为252.9 nm,对应的光学带隙为4.74 eV。此外,阴极荧光(CL)光谱测试结果显示,Ni^(2+)掺杂β-Ga_(2)O_(3)单晶在600~800 nm具有宽带近红外发光特性,有望拓宽β-Ga_(2)O_(3)单晶材料在宽带近红外方面的应用。Ni-dopedβ-Ga_(2)O_(3)single crystals were grown by edge-defined film-fed growth(EFG)method,and the crystal structure and quality were verified by powder X-ray diffraction(PXRD)and Laue diffraction.The effect of Ni^(2+)doping on optical properties of β-Ga_(2)O_(3) was investigated by UV-Vis-NIR transmission spectra and infrared transmission spectra.It is found that the ultraviolet cut-off edge of(100)plane is 252.9 nm and corresponding optical bandgap is 4.74 eV.Furthermore,the broadband near-infrared luminescent property of Ni-dopedβ-Ga_(2)O_(3)was discovered by cathodoluminescence(CL)spectroscopy in the range from 600 nm to 800 nm,which is expected to broaden the application ofβ-Ga_(2)O_(3)crystal in broadband near-infrared.

关 键 词：氧化镓 宽禁带半导体 光电性能 宽带近红外发光 导模法 Ni掺杂 

分 类 号：O734[理学—晶体学] TQ133.5[化学工程—无机化工]