消除硅通孔侧壁刻蚀损伤的方法  

Methods to Eliminate Etching Damage on Sidewall of Silicon Via

作　　者：康建波 商庆杰[1] 王利芹 KANG Jianbo;SHANG Qingjie;WANG Liqin(The 13th Research Institute of CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《电子工艺技术》2023年第4期10-12,43,共4页Electronics Process Technology

基　　金：国家强基项目(亚毫米波3D集成与系统验证)。

摘　　要：硅通孔刻蚀是TSV技术的重要工序步骤,采用标准博世(Bosch)工艺刻蚀硅通孔(宽为150μm),发现硅通孔侧壁出现多处刻蚀损伤。通过优化Bosch工艺参数增加沉积保护,消除了硅通孔侧壁刻蚀损伤问题,通孔开口差值,即通孔下开口宽度与通孔上开口宽度的差,从原来的22μm减小到13μm。利用优化后的工艺配方对硅通孔和硅腔(宽为1 500μm)同时进行刻蚀时,发现硅腔刻蚀后会产生硅针,不能应用到实际生产。经过多轮次Bosch工艺参数调整,把Bosch工艺沉积步骤的偏置功率设置为10 W,同时解决了硅通孔侧壁刻蚀损伤和硅腔刻蚀出现硅针问题,最终成功应用到MEMS环形器系列产品当中。Silcon via etching is an important procedure in TSV technology,using the standard Bosch process to etch silicon via with a width of 150 μm,many etching damage are found on the sidewall of silicon via.The problem of etching damage on the sidewall of silicon via is eliminated by optimizing Bosch process parameters to increase deposition protection,the D-value of silicon via,that is,the difference between the lower opening width and the upper opening width,is reduced from 22 μm to 13 μm.When the optimized process formula is used to simultaneously etch the silicon via and silicon cavity with a width of 1 500 μm,it is found that silicon needles would be generated after silicon cavity etching,which cannot be applied to actual production.After multiple rounds of Bosch process parameter adjustment,the bias power of Bosch process deposition is set to 10 W,the problem of silicon via sidewall etching damage and silicon needles are solved.Finally,it is successfully applied to MEMS circulators series products.

关 键 词：硅通孔刻蚀 TSV技术 Bosch工艺 刻蚀损伤 硅腔 

分 类 号：TN405[电子电信—微电子学与固体电子学]