锑化铟晶片高温加速贮存性能变化研究  

High-Temperature Accelerated Storage Performance of Indium Antimonide Wafers

作　　者：吴玮[1] 董晨 赵超[1] 董涛 折伟林[1] 黄婷 彭志强 李乾 WU Wei;DONG Chen;ZHAO Chao;DONG Tao;SHE Wei-lin;HUANG Ting;PENG Zhi-qiang;LI Qian(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2023年第8期13-19,共7页Infrared

基　　金：国家重点研发计划资助课题(2018YFB2200301);研究生科研与实践创新计划校级项目(2021XKT1254)。

摘　　要：锑化铟晶片在存放以及使用过程中的性能稳定性是影响制备的探测器性能的重要因素之一。为了探究锑化铟晶片在长时间放置情况下的性能变化情况,对锑化铟晶片进行高温加速贮存试验,并在试验过程中对晶片几何参数、表面粗糙度、电学参数、位错缺陷等几个重要性能参数进行跟踪检测。结果表明,在高温加速试验条件下,除晶片外形发生轻微变化以外,其他性能基本不发生变化,晶片能够长期保存。The stability of the performance of indium antimonide wafers during storage and use is one of the important factors affecting the performance of the prepared detectors. In order to investigate the performance changes of indium antimonide wafers under long-time storage, high-temperature accelerated storage test was carried out on indium antimonide wafers, and several important performance parameters such as geometrical parameters, surface roughness, electrical parameters and dislocation defects were tracked and detected in the process of the test. The results show that under the conditions of high-temperature accelerated test, except for the slight change of wafer shape, other properties basically do not change, and the wafers can be stored for a long time.

关 键 词：锑化铟 红外探测器 高温加速贮存试验 几何参数 位错缺陷 

分 类 号：TN213[电子电信—物理电子学]