硅基碲镉汞红外探测器表面钝化研究  

Study on Surface Passivation of Silicon-based HgCdTe Infrared Detector

作　　者：戴永喜 何斌 郑天亮 宁提[1] 李乾 张雨竹 DAI Yong-xi;HE Bin;ZHENG Tian-liang;NING Ti;LI Qian;ZHANG Yu-zhu(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2023年第8期28-33,共6页Infrared

基　　金：国家重点研发计划资助课题(2018YFB2200301);研究生科研与实践创新计划校级项目(2021XKT1254)。

摘　　要：碲镉汞(Mercury Cadmium Telluride,MCT)材料的表面钝化是红外探测器制备中的关键工艺之一。高性能MCT器件需要稳定且可重复生产的钝化表面和符合器件性能要求的界面。因此,探究MCT表面钝化技术具有重要意义。研究了MCT的分子束外延(Molecular Beam Epitaxy,MBE)原位钝化与磁控溅射钝化两种钝化技术。结果表明,MBE原位钝化膜层的致密性较好,钝化层表面的缺陷孔洞较小,钝化层与MCT的晶格匹配度较好,器件流片的电流-电压(I-V)特性要优于磁控溅射正常钝化。The surface passivation of mercury cadmium telluride(MCT)materials is one of the key processes in the preparation of infrared detectors.High-performance MCT devices require stable and reproducible passivation surfaces and interfaces that meet the device performance requirements.Therefore,it is of great significance to explore MCT surface passivation technology.Molecular beam epitaxy(MBE)in-situ passivation and magnetron sputtering passivation techniques of MCT were studied.The results show that the compactness of the in-situ passivation film by MBE is better,the defect holes on the surface of the passivation layer are smaller,the lattice matching between the passivation layer and the MCT is better,and the current-voltage(I-V)characteristics of the device streamer are better than normal passivation by magnetron sputtering.

关 键 词：碲化镉 分子束外延 钝化 电流-电压特性 

分 类 号：TN215[电子电信—物理电子学]