10kV高压SiC GTO模块的研制  

Fabrication of 10kV High-voltage SiC Power GTO Modules

作　　者：李现兵 杨同同 姚鹏[1] 钟期雨 岳瑞峰[1] 王燕[1] 韩荣刚 王亮 LI Xianbing;YANG Tongtong;YAO Peng;ZHONG Qiyu;YUE Ruifeng;WANG Yan;HAN Ronggang;WANG liang(School of Integrated circuit,Tsinghua University,Haidian District,Beijing 100084,China;Smart Grids Research Institute of SGCC,Changping District,Beijing 102209,China)

机构地区：[1]清华大学集成电路学院,北京市海淀区100084 [2]国网智能电网研究院有限公司,北京市昌平区102209

出　　处：《中国电机工程学报》2023年第16期6368-6374,共7页Proceedings of the CSEE

基　　金：北京市科委重点支持项目(Z201100004020002)。

摘　　要：文中提出一款基于自主设计的尺寸为8mm×8mm的10kV碳化硅(silicon carbide,SiC)门极可关断晶闸管(gate-turn-off thyristor,GTO)单芯片封装的焊接式模块。详细介绍10kV SiC GTO模块的设计与制造工艺,通过对比裸芯片与封装后模块在10.5kV阻断电压下的漏电流,验证模块绝缘设计冗余和封装工艺,对模块的动态、静态、极限过流能力、关断增益等性能进行测试并给出初步测试结果。A 10kV SiC gate-turn-off(GTO)module fabricated with self-designed GTO devices is introduced.The size of the fabricated SiC GTO is 8mm×8mm.The detailed design process of the 10.5kV SiC GTO module is given,and the insulation properties of the module are tested by comparing the Leakage current of the chip at 10kV blocking voltage before and after packaging.The static,dynamic,maximum over current and turn off gain electrical characteristics are also measured.

关 键 词：SIC 10kV SiC门极可关断晶闸管模块 开关时间 极限通流 

分 类 号：TN3[电子电信—物理电子学]