栅宽对AlGaN/GaN HEMTs亚阈值摆幅的影响  

Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs

作　　者：季启政 刘峻 杨铭 马贵蕾 胡小锋 刘尚合 JI Qi-zheng;LIU Jun;YANG Ming;MA Gui-lei;HU Xiao-feng;LIU Shang-he(Army Engineering University,Shijiazhuang Campus,National Key Laboratory on Electromagnetic Environment Effects,Shijiazhuang,Hebei 050003,China;Beijing Institute of Spacecraft Environment Engineering,Beijing 100094,China;School of Electronics&Information Engineering,Nanjing University of Information Science&Technology,Nanjing,Jiangsu 210044,China;Beijing Orient Institute of Measurement and Test,Beijing 100094,China)

机构地区：[1]陆军工程大学石家庄校区电磁环境效应重点实验室,河北石家庄050003 [2]北京卫星环境工程研究所,北京100094 [3]南京信息工程大学电子与信息工程学院,江苏南京210044 [4]北京东方计量测试研究所,北京100094

出　　处：《电子学报》2023年第6期1486-1492,共7页Acta Electronica Sinica

基　　金：国家自然科学基金(No.61904007)。

摘　　要：制备了不同栅极宽度的AlGaN/GaN高电子迁移率晶体管,通过测量各器件电容-电压曲线和转移特性曲线,得到了栅沟道载流子输运特性以及亚阈值摆幅,结果显示当栅极宽度从10μm增加到50μm时,亚阈值摆幅下降了40.3%.定性且定量地分析了亚阈值摆幅值随栅极宽度变化的原因,发现不同的栅极宽度对应不同的极化散射强度,亚阈值摆幅的变化是由栅沟道载流子输运特性和极化散射效应造成的.为AlGaN/GaN高电子迁移率晶体管开关性能优化提供了新的视角与维度,将促进其更好地应用于无线通信、电力传输以及国防军工领域.AlGaN/GaN high electron mobility transistors(HEMTs)with different gate widths are prepared.The gatechannel carrier transport characteristics and the subthreshold swing(SS)are obtained by measuring the capacitance-voltage curve and transfer characteristic curve of each HEMT.The results show that the SS value decreases by 40.3%with gate width increasing from 10μm to 50μm.The factors affecting the subthreshold swing variation are analyzed qualitatively and quantificationally.It is found that different gate widths correspond to different polarization scattering intensity,and the SS behavior results from gate-channel carrier transport characteristics and polarization scattering effect.This provides a new perspective and dimension for AlGaN/GaN HEMTs switching performance optimization,which will promote its better application in wireless communication,power transmission and defense industry.

关 键 词：ALGAN/GAN高电子迁移率晶体管 亚阈值摆幅 极化 散射 

分 类 号：TN386.3[电子电信—物理电子学]