低纹波超辐射发光二极管的增透膜研制  

Design and Fabrication of Antireflective Film for Weak Ripple Superluminescent Diode

作　　者：游道明 谭满清[1,2] 郭小峰 郭文涛[1] 曹营春[1] 陈文彬 You Daoming;Tan Manqing;Guo Xiaofeng;Guo Wentao;Cao Yingchun;Chen Wenbin(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049 [3]中国科学院大学电子电气与通信工程学院,北京100049

出　　处：《中国激光》2023年第13期26-35,共10页Chinese Journal of Lasers

基　　金：国家电网公司科技项目(5700-202058482A-0-0-00)。

摘　　要：纹波系数是超辐射发光二极管(SLD)的关键指标,增透薄膜被用于降低纹波系数。基于平面波方法的增透膜设计得到广泛应用,然而倾斜腔面SLD中增透膜的性能普遍不佳,使用时域有限差分方法进行分析,发现存在反射曲线偏离和反射率高等问题。优化了增透膜设计,优化后1°~10°腔面倾角内的反射率降低,降幅最高达82%,其中双层增透膜反射率低于0.05%。采用反应磁控溅射工艺镀膜,并验证了优化设计效果。经过增透膜优化,光谱纹波得到有效抑制,SLD管芯纹波系数和调制系数分别仅为0.019 dB和2.30×10^(-3),降幅超过50%,在100 mA的驱动电流下仍保持10 mW的光功率。所研制的增透膜能够有效减小腔面反射率,利用该增透膜制备了低纹波SLD。研究结果为SLD及其他半导体光电子器件的光学薄膜研制提供了参考。Objective The ripple index is one of the most crucial parameters of superluminescent diodes(SLDs).A low ripple index is necessary for the application of SLDs in sensing areas such as fiber-optic gyroscopes.Therefore,reduced reflectivity of the facet is required,and the main strategy involves coating with antireflective(AR)films.The reflectivity of the AR films is generally less than 0.1%,which is a strict requirement.Although the AR film designed using the plane wave method(PWM)is widely used,its performance in SLDs is not ideal,and the actual reflectivity deviates from the design value.Therefore,the purpose of this study is to design and fabricate AR films for SLDs that can effectively reduce the ripple index.Methods The first part is the simulation method.The finite difference time domain(FDTD)method is used to analyze the optical properties of the films,and a perfect matching layer(PML)is used as the boundary condition.In addition,to reduce the resource requirements of the FDTD method,a simplified simulation model is used,which highlights the main influencing factors.To optimize the films,parameters such as film thickness and refractive index are scanned by FDTD method to determine the parameter range of low reflectivity,and the particle swarm algorithm is used to obtain the optimal parameters within this range.For the coating process,the optical film is manufactured by reactive magnetron sputtering,and an AR ion beam assists the coating process.In addition,the film thickness is monitored and controlled online using a crystal oscillator control system.Reflectivity measurement of thin films is important,including direct measurement of the accompanying films and indirect measurement of the facet of the SLD.The SLD is indirectly measured by spectral ripple,which is also the mainstream reflectivity measurement method for other semiconductor optoelectronic devices.Results and Discussions The simulation results show that the design of the PWM film faces many problems.For the single-layer and double-layer AR films,th

关 键 词：薄膜 超辐射发光二极管 增透膜 倾斜腔面 优化设计 纹波系数 

分 类 号：TN364.2[电子电信—物理电子学]