SiC MOSFET的温度特性及结温评估研究进展  

Research Progress of Temperature Characteristics and Junction Temperature Evaluation of SiC MOSFETs

作　　者：吴军科 李辉 魏云鹏 魏向楠 闫海东 Wu Junke;Li Hui;Wei Yunpeng;Wei Xiangnan;Yan Haidong(School of Mechanical and Electrical Engineering,Guilin University of Electronic Technology,Guilin 541004,China;ZJU-Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 310017,China)

机构地区：[1]桂林电子科技大学机电工程学院,广西桂林541004 [2]浙江大学杭州国际科创中心,杭州310017

出　　处：《半导体技术》2023年第7期541-556,共16页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51967005);广西科技计划项目(桂科AD20297046)。

摘　　要：与Si器件相比,SiC器件具有更加优异的电气性能,新特性给其结温评估带来了新挑战,许多适用于Si器件的结温评估方法可能不再适用于SiC器件。首先对SiC金属氧化物半导体场效应晶体管(MOSFET)的温度特性进行了分析,阐述了本征载流子浓度、载流子迁移率等参数受温度的影响机理,分析了器件阻断特性、输出特性、转移特性等参量,以便找到能够表征结温特性的电气参量;然后研究分析了功率器件结温测量的各类方法,并重点阐述了温敏电参数(TSEP)法在SiC MOSFET结温评估领域的应用前景,从线性度、灵敏度等6个方面对比分析了各方法的优缺点,并指出阈值电压和体二极管压降作为TSEP具有显著优势;最后分析了TSEP法在目前工程应用中面临的挑战,并对未来的研究工作进行了展望。Compared with Si devices,SiC devices have more excellent electrical properties,and the new characteristics have brought new challenges to the junction temperature evaluation.Many junction temperature evaluation methods suitable for Si devices may no longer be suitable for SiC devices.Firstly,the temperature characteristics of SiC metal oxide semiconductor field effect transistors(MOSFETs)are analyzed.The influence mechanisms of temperature on intrinsic carrier concentration,carrier mobility and other parameters are expounded.The blocking-up characteristics,output characteristics,transfer characteristics and other parameters of the device are analyzed,in order to find the electrical parameters that can characterize the junction temperature characteristics.Then,various methods for junction temperature measurement of power devices are investigated and analyzed,and the application prospect of temperaturesensitive electrical parameter(TSEP)method in the field of junction temperature evaluation of the SiC MOSFET is emphatically expounded.The advantages and disadvantages of each method are compared and analyzed from six aspects,such as linearity and sensitivity.It is pointed out that threshold voltage and body diode voltage drop have significant advantages as TSEP.Finally,the challenges of TSEP method in engineering application are analyzed,and the future researches are prospected.

关 键 词：功率器件 SIC 温度特性 结温评估 温敏电参数(TSEP) 

分 类 号：TN386.1[电子电信—物理电子学] TN307