用于毫米波相控阵的U波段10W GaN功率放大器MMIC  

U-Band 10 W GaN Power Amplifier MMIC Applied in Millimeter-Wave Phased Array

作　　者：柯鸣岗 阮文州 夏侯海[1] 杨卅男 Ke Minggang;Ruan Wenzhou;Xia Houhai;Yang Sanan(The 14^(th)Research Institute,CETC,Nanjing 210013,China;The 13^(th)Research Institute,CETC,Shjiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十四研究所,南京210013 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第7期605-610,共6页Semiconductor Technology

摘　　要：基于0.15μm GaN高电子迁移率晶体管(HEMT)工艺,研制了一款U波段10 W功率放大器单片微波集成电路(MMIC)。该功率放大器MMIC使用的GaN HEMT漏源击穿电压高达90 V,在28 V的漏源电压下,器件功率密度达到5 W/mm。电路级间引入增益补偿网络(GCN),并与偏置网络结合,提高电路稳定性的同时可降低插入损耗;输出级匹配电路使用威尔金森功率合成器及簇丛式结构实现8路功率合成,同时保证阻抗匹配效果及漏极供电能力,提高放大器的输出功率与效率。测试结果表明,在40~50 GHz工作频带内,在栅极工作电压为-1.4 V,漏极工作电压28 V的工作条件下,该功率放大器MMIC饱和输出功率大于40 dBm,功率增益大于15 dB,输入电压驻波比(VSWR)小于2,功率附加效率(PAE)大于20%。A 10 W power amplifier monolithic microwave integrated circuit(MMIC)for U-band application was designed and fabricated using 0.15μm GaN high electron mobility transistor(HEMT)technology.The drain-source breakdown voltage of the GaN HEMT used in the power amplifier MMIC is up to 90 V.The power density of the HEMT is up to 5 W/mm at 28 V drain-source voltage.A gain compensation network(CCN)was introduced between the circuit stages,which was combined with the bias network to improve the circuit stability while reducing the insertion loss.Wilkinson power combiner and cluster structure were applied in the output stage matching circiut to realize 8-way power combination,and to ensure impedance matching effect and drain power supply capability,which can improve the output power and efficiency of the amplifier.Measurement results show that within the working frequency band of 40-50 GHz,the power amplifier MMIC has a saturated output power greater than 40 dBm,a power gain greater than 15 dB,an input voltage standing wave ratio(VSWR)less than 2,and a power added efficiency(PAE)greater than 20%at the gate working voltage of-1.4 V and drain working voltage of 28 V.

关 键 词：功率放大器 GAN U波段 增益补偿网络(GCN) 功率合成 单片微波集成电路(MMIC) 

分 类 号：TN722.75[电子电信—电路与系统] TN43