基于正交实验法的混合相VO_(x)薄膜最佳制备参数研究  

Study on the Optical Preparation Parameters of Mixed-phase VO_(x)Thin Films Based on Orthogonal Experimental Method

作　　者：夏阳 王涛 董翔 XIA Yang;WANG Tao;DONG Xiang(School of Optoelectrical Science and Engineering,University of Electronic Science and Technol.of China,Chengdu 610054,CHN)

机构地区：[1]电子科技大学光电科学与工程学院,成都610054

出　　处：《半导体光电》2023年第3期382-388,共7页Semiconductor Optoelectronics

摘　　要：为研究磁控溅射的衬底温度、氧氩比、沉积时间和工作气体流量对混合相VO_(x)薄膜电学性能的影响,采用正交实验法,设计了4因素4水平16组实验,实施实验并记录样品电阻温度系数(TCR)和方阻值,分析薄膜电学性能随不同因素不同水平的变化趋势;然后,结合均值和方差分析以及XPS分析,得到不同因素影响混合相VO_(x)薄膜电学性能程度的大小依次为:工作气体流量,衬底温度,氧氩比,沉积时间。最后,得出制备混合相VO_(x)薄膜的优选参数:溅射电流0.3 A,衬底温度270℃,氧氩比2.8%,沉积时间20 min,工作气体流量120 cm^(3)/min,测试结果显示,其TCR为-2.65%/K,方阻为1102.1 kΩ/。The factors of magnetron spurring affecting mixed-phase VO_(x)thin film properties were examined:substrate temperature,oxygen-argon ratio,spurring time and working gas flow rate,by orthogonal experimental method(16 test-groups,4 factors,4 levels).Experiment was conducted and the temperature coefficient of resistance and square resistance values of the samples were recorded to analyze the trend of the electrical properties of the films with different levels of different factors.Then,combining mean and variance analysis and XPS analysis,the magnitude of the different factors affecting the electrical properties of the mix-phase VO_(x)films was obtained in the following order:working gas flowsubstrate temperatureoxygen-argon ratiodeposition time.Finally,the optimal parameters for mixed-phase VO_(x)films preparation were obtained:sputtering current 0.3 A,substrate temperature 270℃,oxygen-argon ratio 2.8%,deposition time 20 min,and working gas flow rate 120 cm^(3)/min.The test results show that its TCR is-2.65%/K and sheet resistance is 1102.1 kΩ/□.

关 键 词：VO_(x) 磁控溅射 正交实验 XPS分析 优选参数 

分 类 号：O484[理学—固体物理]