考虑阈值迟滞的碳化硅MOSFET开关暂态解析模型  

Analytical Switching Transient Model for Silicon Carbide MOSFET Considering Threshold Voltage Hysteresis

作　　者：徐子珂 蔡雨萌 孙鹏 赵志斌 王威 XU Zike;CAI Yumeng;SUN Peng;ZHAO Zhibin;WANG Wei(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,North China Electric Power University,Beijing 102206,China;State Grid Shanghai Municipal Electric Power Company,Shanghai 200122,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京102206 [2]国网上海市电力公司,上海200122

出　　处：《高电压技术》2023年第7期3051-3061,共11页High Voltage Engineering

基　　金：国家电网有限公司总部科技项目(5209502000D5)。

摘　　要：由于SiC/SiO_(2)界面固有的高界面态密度,阈值迟滞现象一直影响碳化硅MOSFET的可靠性。为量化评估阈值迟滞对碳化硅MOSFET开关特性的影响,首先考虑了驱动电压的上升与下降时间,建立了驱动电压非理想突变的开关暂态模型;其次,按照IEC标准得到开关延时与开关损耗的解析表达式;然后,进行了不同驱动负压下的动态特性实验并提取了开关延时与开关损耗;最后,通过实验结果与解析模型的结合,解耦并量化了驱动负压与阈值迟滞对开关特性的影响,得到了阈值迟滞影响下驱动负压与阈值电压的关系。结果表明,驱动负压与阈值迟滞均会引起开通延时降低,但阈值迟滞对其影响远大于驱动负压。驱动负压对开通损耗无影响,但阈值迟滞会导致开通损耗的降低。Due to the inherent high interfacial state density of SiC/SiO_(2) interface,threshold voltage hysteresis always affects the reliability of SiC MOSFET.In order to quantitatively evaluate the effect of threshold voltage hysteresis on the switching characteristics of SiC MOSFET,firstly,a switching transient model with non-ideal mutation of driving voltage was established by considering the rise and fall time of driving voltage.Secondly,according to the IEC standard,the analytic expressions of switching delay time and switching loss were obtained.Moreover,the dynamic characteristics under different driving negative voltage were tested and the switching delay and switching loss were extracted.Finally,through the combination of experimental results and analytical model,the influence of driving negative voltage and threshold voltage hysteresis on switching characteristics was decoupled and quantified,and the relationship between driving negative voltage and threshold voltage under the influence of threshold voltage hysteresis was obtained.The results show that both the driving negative voltage and threshold voltage hysteresis can reduce the turn-on delay time,whereas,the threshold voltage hysteresis has a greater effect on it than the driving negative voltage.The driving negative voltage has no effect on turn-on loss,whereas,the threshold voltage hysteresis will lead to the reduction of turn-on loss.

关 键 词：碳化硅MOSFET 驱动电压 非理想突变 阈值迟滞 开关特性 解析模型 

分 类 号：TN386[电子电信—物理电子学]