TFT-IGZO工艺制程中TFT特性研究与改善  

The Research and Improvement of TFT Characteristics in TFT-IGZO Process

作　　者：赵辉 华涛 王艳昌 ZHAO Hui;HUA Tao;WANG Yanchang(Nanjing BOE Display Technology Co.,Ltd.,Nanjing 210033,CHN)

机构地区：[1]南京京东方显示技术有限公司,南京210033

出　　处：《光电子技术》2023年第2期173-176,共4页Optoelectronic Technology

摘　　要：分析了IGZO-TFT器件的基本特性及电性不稳定性影响因素。对有源保护层薄膜性能与TFT电学特性的依存关系给出了合理解释,并通过实验验证优化了有源保护层制备手法,解决了因有源保护层SiO2致密性引起的TFT开关阈值电压左向偏移显示不良问题;同时还基于IGZO-TFT总结了PECVD SiO2薄膜特性与沉积各重要因素间的关系。IGZO TFT is a typical representative of metal oxide TFT.The basic characteristics of IGZO-TFT devices and the influencing factors of electrical instability were analyzed.In the study of influencing factors,a reasonable explanation was given for the dependence between the film perfor-mance of the active protective layer and the electrical properties of TFT.And the preparation method of the active protective layer was optimized through experimental verification,which could solve the problem of poor display of left shift of TFT switch threshold voltage caused by the density of the ac-tive protective layer SiO2.At the same time,the relationship between the characteristics of PECVD SiO,films and the important factors of deposition based on IGZO-TFT was also summarized.

关 键 词：薄膜晶体管 铟镓锌氧化物 电流电压特性曲线 二氧化硅薄膜 显示不良 

分 类 号：TN949.12[电子电信—信号与信息处理]