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作 者:王泽宇[1] 彭亚男 苏建修[3] 陈佳鹏[2,4] WANG Zeyu;PENG Yanan;SU Jianxiu;CHEN Jiapeng(Zhengzhou Professional Technical Institute of Electronic&Information,Zhengzhou 451450,China;Jiangsu Key Laboratory of Precision and Micro-Manufacturing Technology,National Key Laboratory of Science and Technology on Helicopter Transmission,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China;School of Mechanical and Electrical Engineering,Henan Institute of Science and Technology,Xinxiang 453003,Henan,China;Research Center for Advanced Micro-/Nano-Fabrication Materials,Shanghai University of Engineering Science,Shanghai 201620,China)
机构地区:[1]郑州电子信息职业技术学院,郑州451450 [2]南京航空航天大学,江苏省精密与微细制造技术重点实验室,直升机传动技术国家重点实验室,南京210016 [3]河南科技学院机电学院,河南新乡453003 [4]上海工程技术大学,微纳制造先进材料研究中心,上海201620
出 处:《金刚石与磨料磨具工程》2023年第4期497-503,共7页Diamond & Abrasives Engineering
基 金:江苏省精密与微细制造技术重点实验室开放基金;国家自然科学基金面上项目(51375149)。
摘 要:为提高柔性显示衬底不锈钢箔片化学机械抛光加工效率,研制一种三氯化铁-草酸型抛光液并用于304不锈钢衬底的化学机械抛光加工过程。设计正交优化试验,确定磨粒粒径、磨料含量、草酸含量和三氯化铁含量对材料去除率和表面粗糙度(S_(a))的影响显著性顺序,并重点探究三氯化铁和草酸对材料去除率的影响规律。利用优化后的抛光液精抛304不锈钢,其材料去除率高于560 nm/min,抛光30 min后Sa低于8 nm。相比现有抛光液的材料去除效率(226.56 nm/min),新抛光液的加工效率提升超过1倍。To enhance the chemical mechanical polishing(CMP)efficiency of flexible display substrates,a polishing slurry based on ferric chloride and oxalic acid was proposed for polishing 304 stainless steel substrates.An orthogonal optimization test was designed to determine the significance order of the influence of abrasive size,abrasive content,oxalic acid content and ferric chloride content on the material removal rate(MRR)and surface roughness(surface arithmetical mean height of area,Sa).The aim was to investigate the effects of ferric chloride and oxalic acid on MRR.An optimized polishing slurry capable of achieving an MRR of over 560 nm/min and a Sa as low as 8 nm after 30 min was obtain.Compared with the conventional polishing slurry,whose MRR is 226.56 nm/min,the novel slurry has doubled its polishing efficiency or more.
关 键 词:化学机械平坦化 304不锈钢 三氯化铁-草酸 材料去除率 表面粗糙度
分 类 号:TG732[金属学及工艺—刀具与模具] TH162[机械工程—机械制造及自动化] TN27[电子电信—物理电子学]
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