提升IGBT电流密度的制造工艺方法研究  

Study on Manufacturing Process Methods for Improving IGBT Current Density

作　　者：杨继业 张须坤 潘嘉 YANG Jiye;ZHANG Xukun;PAN Jia(Shanghai Huahong Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China)

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201203

出　　处：《集成电路应用》2023年第7期4-5,共2页Application of IC

摘　　要：阐述改善功率器件制造工艺、提升IGBT电流密度的可行性方案,基于SJNFETⅢ工艺平台和SJIGBT新技术,制造出650V/20A的Super-IGBT器件,当通态压降为2V时,电流密度高达515A/cm^(2)。This paper analyses a feasible plan to improve the manufacturing process of power devices and increase the current density of IGBT.Based on the SJNFET III process platform and SJ-IGBT new technology,a 650V/20A Super-IGBT device is manufactured.When the on state voltage drop is 2V,the current density can reach as high as 515A/cm^(2).

关 键 词：窄间距 IGBT SJ-MOS 超级IGBT 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN432