外延片FS-IGBT背面发射结注入效率一致性的控制技术分析  

Analysis of Control Techniques for Consistency of Injection Efficiency of Epitaxial FS-IGBT Back Emitter Junction

作　　者：王晓军 WANG Xiaojun(HH Zealcore Electronic Technology Co.,Ltd.,Shanghai 202210,China)

机构地区：[1]上海华虹挚芯电子科技有限公司,上海202210

出　　处：《集成电路应用》2023年第7期38-40,共3页Application of IC

摘　　要：阐述外延片FS-IGBT背面发射结注入效率一致性的控制技术,包括IGBT器件的特点,IGBT背面FS层的设计技术,IGBT产品工艺流程设计。探讨在FS-IGBT背面减薄之后,背面硼离子注入之前,用四探针测试芯片背面方块电阻来控制背面发射结发射效率,实现背面FS层的高精度控制。This paper describes the control technology for the injection efficiency consistency of the back emission junction of the epitaxial wafer FS-IGBT, including the characteristics of IGBT devices, the design technology of the FS layer on the back of IGBT, and the design of the IGBT product process flow. It explores the use of four probes to test the chip's back square resistance after thinning the back of FS-IGBT and before boron ion implantation to control the emission efficiency of the back emission junction, achieving high-precision control of the back FS layer.

关 键 词：集成电路制造 绝缘栅双极晶体管 背面FS层 工艺流程设计 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN322.8