基于动态栅极电阻的SiC MOSFET主动并联均流方法  

Active Parallel Current Sharing Method of SiC MOSFET Based on Dynamic Gate Resistance

作　　者：张瑜 田鸿昌 文阳[3] ZHANG Yu;TIAN Hongchang;WEN Yang(Engineering College of Xi’an Siyuan University,Xi’an 710038,China;Shaanxi Advanced Semiconductor Technology Center,Xi’an 710065,China;School of Automation and Information Engineering,Xi’an University of Technology,Xi’an 710048,China)

机构地区：[1]西安思源学院工学院,西安710038 [2]陕西半导体先导技术中心有限公司,西安710065 [3]西安理工大学自动化与信息工程学院,西安710048

出　　处：《高压电器》2023年第9期286-293,共8页High Voltage Apparatus

基　　金：国家重点研发计划(2020YFB0407800);陕西省自然科学基础研究计划(2022JQ-360);西安思源学院2021年度校基金项目(XASYQN-B2101)。

摘　　要：随着当今时代电力电子技术的发展,SiC MOSFET在高频、高温、高压以及大电流等场合中得到广泛应用,然而,由多管并联所导致的不均流问题成为了当下SiC MOSFET模块广泛应用中的一大阻碍。针对这一问题,文中提出一种基于动态栅电阻的SiC MOSFET模块并联均流方法,其主要原理是通过利用SiC MOSFET开关瞬间漏极电流在源极寄生电感上感应出的电压来检测电流,并通过动态调节栅极驱动电阻来实现并联模块的电流同步。最后,通过利用多脉冲实验对文中所提出的均流策略的可行性及优势进行了实验验证。结果表明,动态栅极电压主动并联均流策略可以有效改善并联模块间电流均流问题。With the development of power electronics technology today,SiC MOSFET is widely used in high frequency,high temperature,high voltage and high current.However,the uneven current sharing caused by multi transistor in parallel connection has become a major obstacle to the wide application of SiC MOSFET module.In view of this problem,a kind of parallel current sharing method of SiC MOSFET module based on dynamic grid resistance was proposed in this paper.Its main principle is to detect the current by using the voltage induced by the drain current of SiC MOSFET switch on the source parasitic inductance,and realize the current synchronization of parallel module by dynamically adjusting the grid driving resistance.Finally,the feasibility and advantages of the current sharing strategy proposed in this paper were verified by multi pulse experiment.The results show that the active parallel current sharing strategy with dynamic grid voltage can effectively improve the current sharing problems between parallel modules.

关 键 词：SiC MOSFET 并联均流 栅极驱动 主动调控 

分 类 号：TN386[电子电信—物理电子学]