面向电极接触应用的二维金属性过渡金属硫属化合物的制备和器件研究进展  

Progress in the preparation and device research of two-dimensional metallic transition metal dichalcogenides for electrical contact applications

作　　者：王嘉龙 胡静怡 郇亚欢 朱莉杰 崔芳芳 张艳锋[1,2] Jialong Wang;Jingyi Hu;Yahuan Huan;Lijie Zhu;Fangfang Cui;Yanfeng Zhang(School of Materials Science and Engineering,Peking University,Beijing 100871,China;Academy for Advanced Interdisciplinary Studies,Peking University,Beijing 100871,China)

机构地区：[1]北京大学材料科学与工程学院,北京100871 [2]北京大学前沿交叉学科研究院,北京100871

出　　处：《科学通报》2023年第22期2886-2900,共15页Chinese Science Bulletin

基　　金：国家自然科学基金(51991344,51991340,51925201,52202157)资助。

摘　　要：二维(two-dimensional,2D)层状半导体材料因具有原子级厚度、优异的光电性质和良好的热/化学稳定性等,被认为是延续摩尔定律的重要候选材料之一.基于超薄2D半导体材料构建的电子器件本质上是一种界面器件,其性能与金属-半导体接触的质量密切相关.常规蒸镀法制备金属电极通常涉及高能原子(团簇)轰击,该过程往往导致沟道材料的损伤和界面缺陷的产生,使得接触质量下降,接触电阻增大,器件性能显著恶化.2D金属性过渡金属硫属化合物(metallic transition metal dichalcogenides,MTMDCs)和半导体性TMDCs具有类似的材料组成、相同的层间范德华相互作用、可兼容的制备方法等,有望作为金属-半导体接触的界面材料,有效改善接触问题.目前,面向电极接触应用的高质量2D-MTMDCs的制备与应用已取得重要进展.本文综述了近年来基于化学气相沉积(chemical vapor deposition,CVD)法制备MTMDCs的一些研究成果,包括不同材料体系的制备、结构表征以及作为电极接触的应用等,最后讨论了该领域目前存在的问题,展望了未来可能的发展方向.With the continuous scaling down of electronic device sizes,the electrical contact becomes increasingly important for determining the devices performances,even beyond the semiconductor material itself.Contacts are the communication links between two-dimensional(2D)channel materials and external circuits,which play decisive roles in the performance of electronic and photoelectric devices.The traditional metal electrode preparation usually involves a deposition process of metals on the surfaces of 2D channel materials.However,the bombardments of“high-energy”metal atoms or clusters onto the surfaces of 2D channel materials,along with the strong local heating caused by the evaporation process,often lead to some problems,such as defects in metal-semiconductor interfaces,metal atoms diffusion,and chemical bonding,etc.These problems will give rise to the generation of defect-induced gap states(DIGS),which will induce the accumulation of a large number of electrons or holes,and ultimately result in the Fermi level pinning effect.To make things worse,the Schottky barrier between metal-semiconductor interfaces will bring about high contact resistance,seriously affecting the devices performance.Therefore,it is of great significance to explore effective strategies to construct atomically clean and sharp contact interfaces and achieve satisfying electrical contacts for improving device performance.Up to now,many efforts have been made to elevate the contact quality of the metal-semiconductor interfaces,including fabricating heterophase(metal-semiconductor)homojunctions based on the same material possessing different phases,constructing van der Waals contacts,designing novel metal electrodes,integrating the 2D semiconductor material with metallic counterpart and so on.Among them,the chemical vapor deposition(CVD)preparation of metallic transition metal dichalcogenides(MTMDCs)and their applications as contact materials in electronic devices have aroused great attention.The CVD method has been proven to enable the controllab

关 键 词：金属性过渡金属硫属化合物 化学气相沉积 电极接触 异质界面 

分 类 号：TB34[一般工业技术—材料科学与工程] TN305[电子电信—物理电子学]