C波段宽带薄膜体声波滤波器设计及验证  

Design and Verification of C Band Broadband Thin-Film Bulk Acoustic Wave Filter

作　　者：蒋世义[1] 蒋平英[1,2] 马晋毅 陈彦光[1] 徐阳[1] 刘娅[1] 徐溢[2] JIANG Shiyi;JIANG Pingying;MA Jinyi;CHEN Yanguang;XU Yang;XU Yang;LIU Ya;XU Yi(The 26th Institute of China Electronics Technology Group Corporation,Chongqing 400060;College of Optoelectronics,Chongqing University,Chongqing 400044)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060 [2]重庆大学光电学院,重庆400044

出　　处：《压电与声光》2023年第4期535-539,共5页Piezoelectrics & Acoustooptics

摘　　要：介绍了一种适用于三维堆叠的凸点式晶圆级封装的小型化C波段宽带薄膜体声波滤波器的设计方法,并进行了工艺验证。通过对压电层薄膜进行钪掺杂、材料参数提取、结构模型优化实现了相对带宽大于5%的薄膜体声波滤波器设计。通过表面硅基微机电系统(MEMS)工艺制备与凸点式晶圆级封装实现滤波器制备。研制出标称频率5800 MHz、插入损耗小于2.8 dB、阻带抑制大于40 dBc、体积仅1.0 mm×1.0 mm×0.35 mm的C波段宽带薄膜体声波滤波器。The design method of a miniaturized C band broadband thin-film bulk acoustic wave filter suitable for bumped wafer level packaging with three-dimensional stacking is introduced,and the process validation is carried out.The design of thin-film bulk acoustic wave filter with a relative bandwidth of more than 5%was realized through scandium doping,material parameter extraction and structural model optimization of the piezoelectric film.The filters are fabricated by the surface silicon based micro-electro-mechanical systems(MEMS)process and bumped wafer level packaging.A C band broadband thin-film bulk acoustic wave filter with a nominal frequency of 5800 MHz,insertion loss of less than 2.8 dB,stopband suppression of greater than 40 dBc and a size of only 1.0 mm×1.0 mm×0.35 mm has been developed.

关 键 词：薄膜体声波谐振器(FBAR) 宽带 高抑制度 

分 类 号：TN75[电子电信—电路与系统]