斜切角对β-Ga_(2)O_(3)(100)面衬底加工的影响研究  

Study on the Influence of Miscut-Angle on the Processing ofβ-Ga_(2)O_(3)(100)Plane Substrate

作　　者：李信儒 侯童 马旭[1] 王佩[1] 李阳[1] 穆文祥[1] 贾志泰[1,2] 陶绪堂 LI Xinru;HOU Tong;MA Xu;WANG Pei;LI Yang;MU Wenxiang;JIA Zhitai;TAO Xutang(State Key Laboratory of Crystal Materials,Institute of Novel Semiconductors,Shandong University,Jinan 250100,China;Shandong Research Institute of Industrial Technology,Jinan 250100,China)

机构地区：[1]山东大学,新一代半导体材料研究院,晶体材料国家重点实验室,济南250100 [2]山东工业技术研究院,济南250100

出　　处：《人工晶体学报》2023年第9期1570-1575,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(52002219,51932004,61975098);广东省重点领域研发计划(2020B010174002);深圳市基础研究计划(JCYJ20210324132014038);111工程2.0(BP2018013)。

摘　　要：本文研究了斜切角的引入对β-Ga_(2)O_(3)(100)面衬底加工的影响,分析了斜切角分别为0°、1°、6°时,(100)面衬底在加工过程中的形貌变化及不同抛光参数对衬底抛光的影响。实验结果表明,随着斜切角的增大,(100)面衬底在加工过程中的解理损伤问题得以改善,加工后表面粗糙度降低,材料去除方式出现了脆性去除-脆塑性混合去除-塑性去除的转变。较小的抛光压力可以有效减少解理损伤,改善表面质量。斜切角为6°时的(100)面衬底抛光效率高,抛光后表面粗糙度可达到Ra≤0.2 nm。In this paper,the influence of miscut-angle on the processing ofβ-Ga_(2)O_(3)(100)plane substrates was studied.The morphology changes of(100)plane substrates during the processing were analyzed when the miscut-angles were 0°,1°and 6°,respectively.Furthermore,the influence of different parameters on the polishing of the substrate was analyzed.The experimental results show that with the increase of the miscut-angle,the cleavage damage of(100)plane substrate reduces,the surface roughness reduces after machining,and the way of material removal transformed from brittle removal to brittle plastic mixed removal to plastic removal.Low polishing pressure can effectively suppress the cleavage damage and improve the surface quality.When the miscut-angle is 6°,the polishing efficiency of(100)plane substrate is high,and the surface roughness after polishing can reach Ra≤0.2 nm.

关 键 词：β-Ga_(2)O_(3) 解理 斜切角 抛光 表面粗糙度 

分 类 号：TQ133.51[化学工程—无机化工]