基于金属锡掺杂浓度变化的光学性能可调谐ITO薄膜制备研究  

Fabrication of Metal Sn Doping Concentration Dependency of ITO Thin Films with Tunable Optical Properties

作　　者：南博洋 洪瑞金[1,2] 陶春先[1,2] 王琦[1,2] 林辉[1,2] 韩朝霞 张大伟[1,2] NAN Boyang;HONG Ruijin;TAO Chunxian;WANG Qi;LIN Hui;HAN Zhaoxia;ZHANG Dawei(School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;Shanghai Key Lab of Modern Optical System,Engineering Research Center of Optical Instrument and System,Ministry of Education,Shanghai 200093,China)

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093 [2]教育部光学仪器与系统工程研究中心,上海市现代光学系统重点实验室,上海200093

出　　处：《人工晶体学报》2023年第9期1617-1623,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61775141,62075133)。

摘　　要：本文通过电子束蒸发技术制备了金属锡掺杂浓度不同的一系列ITO薄膜。采用X射线衍射仪、原子力显微镜、紫外-可见光-近红外分光光度计、四探针测电阻仪和Z扫描系统分别对ITO薄膜的物相结构、微观形貌、光学吸收、方块电阻和非线性光学性能进行测试和表征。结果表明,随着金属锡掺杂浓度由10%增加到30%:ITO薄膜的结晶质量增加;薄膜表面粗糙度增加,晶粒尺寸逐渐增大;等离子体吸收增强,且吸收峰的位置发生红移,光学带隙变窄;薄膜的方块电阻不断减小;非线性吸收系数逐渐增加,绝对值最大可以增至2.59×10^(-7)cm/W。时域有限差分拟合结果表明金属锡掺杂浓度不同的ITO薄膜电场强度变化规律与实验结果相一致。In this paper,a series of ITO thin films with different concentrations of metal Sn doping were prepared by electron beam evaporation technique.X-ray diffractometer,atomic force microscope,UV-Vis-NIR spectrophotometer,four-probe resistivity meter and Z-scan system were used to measure and characterize the physical phase structure,microscopic morphology,optical absorption,square resistance and nonlinear optical properties of ITO films,respectively.The test results show that,with the increase of metal Sn doping concentration from 10%to 30%:the crystalline quality of the ITO film is enhanced;the surface roughness of the film increases and the grain size gradually increases;the plasma absorption is enhanced and the position of the absorption peak is red-shifted and the optical band gap is narrowed;the square resistance of the film continuously reduces;the nonlinear absorption coefficient gradually increases,and the maximum absolute value can be increased to 2.59×10^(-7)cm/W.The finite-difference fitting results in the time domain show that the variation pattern of electric field intensity of ITO thin film samples with different metal Sn doping concentrations is consistent with the experimental results.

关 键 词：氧化铟锡 局部表面等离子体共振 非线性光学响应 Z扫描 增强电场 掺杂 电子束蒸发 

分 类 号：O484.1[理学—固体物理] O437[理学—物理]