碳化硅功率模块封装技术综述  

Review of Packaging Technology for Silicon Carbide Power Modules

作　　者：王来利 赵成 张彤宇 闫飞飞 Wang Laili;Zhao Cheng;Zhang Tongyu;Yan Feifei(School of Electrical Engineering Xi’an Jiaotong University,Xi’an 710049 China)

机构地区：[1]电力设备电气绝缘国家重点实验室(西安交通大学),西安710049

出　　处：《电工技术学报》2023年第18期4947-4962,共16页Transactions of China Electrotechnical Society

基　　金：国家重点研发计划资助项目(2019YFE0122800)。

摘　　要：碳化硅作为宽禁带半导体的代表,理论上具有极其优异的性能,有望在大功率电力电子变换器中替换传统硅IGBT,进而大幅提升变换器的效率以及功率密度等性能。但是目前商用碳化硅功率模块仍然沿用传统硅IGBT模块的封装技术,且面临着高频寄生参数大、散热能力不足、耐温低、绝缘强度不足等问题,限制了碳化硅半导体优良性能的发挥。为了解决上述问题,充分发挥碳化硅芯片潜在的巨大优势,近年来出现了许多针对碳化硅功率模块的新型封装技术和方案,重点关注碳化硅功率模块封装中面临的电、热以及绝缘方面的挑战。该文从优化设计方法所依据的基本原理出发,对各种优化技术进行分类总结,涵盖了降低高频寄生电感、增强散热性能、提高耐高温能力以及提升绝缘强度的一系列相关技术。在此基础上,对相关的可靠性问题进行总结。最后基于碳化硅功率模块封装技术的现状,对相关技术的未来发展进行了展望。Silicon carbide MOSFETs are of excellent performance and potentially replace traditional silicon IGBTs in high-power power converters.However,commercial silicon carbide power modules still employ the packaging technology of traditional silicon IGBT modules,limiting the excellent performances of silicon carbide semiconductors.In order to solve the above problem and take advantage of silicon carbide chips,many new packaging schemes for silicon carbide power modules have emerged in recent years,focusing on the electrical,thermal,and insulation challenges in the packaging of silicon carbide power modules.As for the electrical challenges,the parasitic inductance in commutation loops is widely concerned.The parasitic inductance on the conductors connects the chips to the external circuits in power modules,which can greatly affect the switching performance of silicon carbide MOSFETs,such as increasing voltage overshoot and arousing oscillations.Then the stress on the chip will be increased,and the switching losses may also be enlarged.Compared to Si IGBTs,SiC MOSFET-based power modules can switch faster,which presents more strict requirements for parasitic inductance.Therefore,new packaging structures are demanded to lower parasitic inductance.There are two ways.The first one is to reduce the self-parasitic inductance.In this aspect,the shapes of connection conductors are optimized.The ribbon bonding techniques,such as aluminum ribbons,copper ribbons,and aluminum-copper ribbons,aim to mitigate the parasitic inductance by increasing the cross-sectional areas.Accordingly,the self-parasitic inductance can be well reduced.Similar techniques include copper-clip connections and planar connections.The second way adopts loop mutual inductance to eliminate the overall parasitic inductance.By reducing the areas of commutation loops,the mutual inductance between conductors can be greatly increased,which can reduce self-parasitic inductance and then reduce the overall parasitic inductance.As for the thermal challenges,there are two

关 键 词：碳化硅功率模块 寄生电感 散热能力 耐高温能力 绝缘能力 可靠性 

分 类 号：TN305[电子电信—物理电子学] TM46[电气工程—电器]