红外波段超辐射发光二极管研究进展  

Research Progresses on Infrared Superluminescent Diodes

作　　者：杨静航 晏长岭 刘云 李奕霏 冯源 郝永芹 李辉 逄超 YANG Jinghang;YAN Changling;LIU Yun;LI Yifei;FENG Yuan;HAO Yongqin;LI Hui;PANG Chao(State Key Laboratory on High-power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《发光学报》2023年第9期1621-1635,共15页Chinese Journal of Luminescence

基　　金：吉林省科技厅项目(20220101122JC);长春理工大学项目(6270111102)。

摘　　要：超辐射发光二极管(SLD)具有高功率、宽光谱和低相干性等光学特性,在光纤通信、工业国防、生物影像和痕量气体检测等领域具有极高的应用价值。本文聚焦于SLD的输出功率与光谱宽度特性,综合评述了量子阱、量子点近红外SLD与量子级联中红外SLD的研究进展。详细介绍了InP基量子短线、混合量子点量子阱与异维量子点量子阱等新型有源结构,以及量子点掺杂与区域混杂等相关工艺技术。最后,概述了SLD的应用前景,并对SLD的潜在研究方向和技术发展应用趋势进行了展望。Superluminescent diode(SLD)has optical characteristics such as high power,wide spectrum and low coherence,and has high application value in the fields of optical fiber communication,industrial defense,biological imaging and trace gas detection.This paper focuses on the output power and spectral bandwidth characteristics of SLD,and comprehensively reviews the research progress of quantum well,quantum dot near-infrared SLD and quantum cascade mid-infrared SLD.Among them,the novel active structure of InP based quantum dash,hybrid quantum well/quantum dots and hybrid quantum well-dots,as well as quantum dot doping and selective area intermixing are introduced in detail.Finally,the application prospects of SLD are outlined,and the potential research directions and technological application trends of SLD are discussed.

关 键 词：超辐射发光二极管 量子阱 量子点 量子级联 光学相干层析成像 

分 类 号：TN312.8[电子电信—物理电子学]