基片温度对脉冲激光沉积ZnS:Co薄膜微结构及光学性质的影响研究  

Effects of Substrate Temperature on the Structural and Optical Properties of ZnS:Co thin Films by Pulsed Laser Deposition

作　　者：李树锋 王丽[2] 高东文[2] LI Shufeng;WANG Li;GAO Dongwen(College of Police Equipment Technical,Chinese People's Police University,Hebei 065000,China;College of Physics and Optoelectronics,Faculty of Science,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]中国人民警察大学警务装备技术学院,河北065000 [2]北京工业大学理学部物理与光电工程系,北京100124

出　　处：《真空科学与技术学报》2023年第9期738-744,共7页Chinese Journal of Vacuum Science and Technology

基　　金：廊坊市科技计划项目(No.2021011002)。

摘　　要：采用脉冲激光沉积技术在石英基片上制备了ZnS:Co薄膜,改变制备过程中石英基片的温度TS,研究了基片温度对薄膜微结构及光学特性的影响。随着基片温度的升高,薄膜的厚度减小,结晶质量得到提升,并朝着(111)方向择优生长。受量子限域效应的影响,薄膜的光学带隙在基片温度为TS=25℃时最大为3.83 eV,光学带隙先随基片温度增大而减小,并在基片温度为400℃时取得最小值3.5 eV,此后随基片温度增大而增大。此外,薄膜的折射率、消光系数、介电系数等光学参数随基片温度升高均有增大趋势。实验表明在基片温度达到400℃以上时,可以获得综合性能较好的微晶薄膜。ZnS:Co thin films were grown on quartz substrates at different substrate temperatures.Evolutions of the films’microstructure and optical properties as a function of substrate temperature were analyzed.The crystalline quality was promoted,and the films demonstrated increasing(111)preferred orientation with increasing substrate temperature.The band gap decreased when the substrate temperature was increased from 25℃to 400℃,and then further increased to 800℃.The evolution of the band gap is associated with the quantum confinement effect.Moreover,the refractive index,extinction coefficient and dielectric constant of the films present an increasing tendency with the increase of substrate temperature.It is shown that superior microcrystal films can be obtained at temperatures higher than 400℃.

关 键 词：脉冲激光沉积 硫化锌掺钴 薄膜 基片温度 

分 类 号：O484[理学—固体物理]