一种X波段三叉H型低电压RF MEMS开关设计  

A Design of X Band Three-Support H Type Low Voltage RF MEMS Switch

作　　者：南敬昌[1] 高飞 李德润 翟雷应 李朝启 刘世泽 NAN Jingchang;GAO Fei;LI Derun;ZHAI Leiying;LI Zhaoqi;LIU Shize(Electronics and Information Engineering,Liaoning Technical University,Huludao125100,China)

机构地区：[1]辽宁工程技术大学电子与信息工程学院,葫芦岛125100

出　　处：《真空科学与技术学报》2023年第9期812-818,共7页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(61971210)。

摘　　要：针对射频电路系统所需要的低电压,高隔离度,低插入损耗的应用需求,通过对开关正对面积对驱动电压产生的影响进行探究,设计了一款应用于X波段三叉H型的RF MEMS开关。开关具有六条悬臂梁作为支撑,通过增大上极板面积来降低开关的开启电压。分别使用HFSS和COMSOL对开关的射频性能和机械性能进行仿真,开关最终优化后,在8-12 GHz内,插入损耗为0.26~0.57 dB,隔离度大于31.30 dB。在10.1 GHz达到最优值,插入损耗为0.40 dB,隔离度为50.25 dB。开关电压在11V时就能够实现状态转换,开关的响应时间为18μs。此开关可与射频可重构器件结合,应用于新一代射频微波领域。In response to the application requirements of low voltage,high isolation and low insertion loss required by the RF circuit system,by exploring the influence of the positive pair area of the switch on the driving voltage,a three-support H-type RF MEMS switch applied in X-band was designed.The switch is supported by six beams to reduce the opening voltage of the switch by increasing the area of the upper plate.The RF performance and mechanical properties of the switch were simulated by HFSS and COMSOL,respectively.After the switch was finally optimized,the insertion loss was 0.26−0.57 dB,and the isolation was greater than 31.30 dB within 8−12 GHz.The optimal value is achieved at 10.1 GHz with an insertion loss of 0.40 dB and an isolation of 50.25 dB.The switching voltage is 11V,and the switching response time is 14μs.The switch can be combined with RF reconfigurable devices and applied to the new generation RF microwave field.

关 键 词：射频微机械开关 ANSOFT HFSS COMSOL 

分 类 号：TN703[电子电信—电路与系统] TN631