三氧化二铁外延薄膜的制备及贯穿位错表征  

Fabrication ofα⁃Fe 2O3 epitaxial thin films and characterization of threading dislocations

作　　者：陶昂 姚婷婷 江亦潇 陈春林[1,2] 马秀良 叶恒强[2] TAO Ang;YAO Ting-ting;JIANG Yi-xiao;CHEN Chun-lin;MA Xiu-liang;YE Heng-qiang(Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang Liaoning 110016;Ji Hua Laboratory,Foshan Guangdong 528200;Bay Area Center for Electron Microscopy,Songshan Lake Materials Laboratory,Dongguan Guangdong 523808;Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]中国科学院金属研究所沈阳材料科学国家研究中心,辽宁沈阳110016 [2]季华实验室,广东佛山528200 [3]大湾区电子显微镜中心,松山湖材料实验室,广东东莞523808 [4]中国科学院物理研究所,北京100190

出　　处：《电子显微学报》2023年第4期410-416,共7页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(Nos.52125101,51971224);广东省基础与应用基础研究重大项目基金(No.2021B0301030003);季华实验室项目(No.X210141TL210).

摘　　要：氧化物薄膜中贯穿位错的类型和密度对其物理与化学性质具有重要影响。本文利用脉冲激光沉积技术在Al_(2)O_(3)(0001)和SrTiO_(3)(111)衬底上分别生长了α⁃Fe_(2)O_(3)外延薄膜,并利用X射线衍射、原子力显微镜和透射电子显微术对不同温度下生长的薄膜其相结构、结晶度、表面形态和位错类型等进行了系统的表征。结果表明:生长温度对Al_(2)O_(3)衬底上薄膜的质量影响很小,而对SrTiO_(3)衬底上薄膜的质量影响显著,Al_(2)O_(3)衬底上薄膜的结晶度和表面平整度普遍优于SrTiO_(3)衬底上的薄膜;Al_(2)O_(3)衬底上薄膜中的贯穿位错为1/3<1100>刃型不全位错,而SrTiO_(3)衬底上薄膜中的贯穿位错不仅包含1/3<1100>刃型不全位错,还有1/3<1101>混合型全位错。The type and density of threading dislocations in oxide thin films have important effects on their physical and chemical properties.In this paper,α⁃Fe_(2)O_(3) epitaxial thin films were grown on Al_(2)O_(3)(0001)and SrTiO_(3)(111)substrates by pulsed laser deposition.The phase structure,crystallinity,surface morphology and dislocation types of the thin films grown at different temperatures were systematically investigated by X⁃ray diffraction,atomic force microscopy and transmission electron microscopy.The result show that the growth temperature has little effect on the quality of theα⁃Fe_(2)O_(3) thin film on the Al_(2)O_(3) substrate,but has significant effect on the quality of the thin film on the SrTiO_(3) substrate.The crystallinity and surface flatness of the thin film on the Al_(2)O_(3) substrate are generally better than that on the SrTiO_(3) substrate.The threading dislocations in theα⁃Fe_(2)O_(3) thin film on the Al_(2)O_(3) substrate are 1/3<1100>partial edge dislocations,while those in theα⁃Fe_(2)O_(3) thin film on the SrTiO_(3) substrate include both 1/3<1100>partial edge dislocations and 1/3<1101>mixed dislocations.

关 键 词：α⁃Fe_(2)O_(3)薄膜 脉冲激光沉积 薄膜生长 贯穿位错 

分 类 号：O484.1[理学—固体物理] O772[理学—物理] O72[金属学及工艺—物理冶金] TG115.215.3[金属学及工艺—金属学] TG115.215.9