高性能ZnO薄膜紫外光电探测器的研究  

Research on High Performance ZnO Thin Film UV Photodetectors

作　　者：刘思霖 张诗曼 王楠[1] Liu Silin;Zhang Shiman;Wang Nan(Changchun Normal University,Changchun Jilin 130032,China)

机构地区：[1]长春师范大学,吉林长春130032

出　　处：《山西化工》2023年第9期1-2,12,共3页Shanxi Chemical Industry

基　　金：吉林省大学生创新创业项目(S202210205132)。

摘　　要：本研究通过磁控溅射法在石英衬底上制备出ZnO薄膜紫外光电探测器,通过X射线衍射(XRD)、吸收光谱、I-V特性曲线以及响应度曲线,对不同退火温度(500、600、700℃)的光电探测器紫外探测性能进行了深入研究。结果表明,利用退火手段,提高了紫外光电探测器的性能,随着退火温度的升高,探测器的暗电流和响应强度逐渐增强。本研究结果为制备高性能ZnO薄膜紫外光电探测器提供了一种可行途径。In this study,ZnO thin film ultraviolet photodetectors were prepared on quartz substrate by magnetron sputtering method.By X-ray diffraction(XRD),absorption spectrum,I-V characteristic curve and responsivity curve,the ultraviolet detection performance of photodetectors at different annealing temperatures(500℃,600℃,700℃)was thoroughly studied.The results showed that the performance of UV photoelectrodetectors were improved by annealing method.With the increase of annealing temperature,the dark current and responsivity of the detectors were enhanced gradually.The results of this study provide a feasible way to prepare high performance ZnO thin film ultraviolet photodetectors.

关 键 词：ZNO薄膜 退火 响应度 

分 类 号：X85[环境科学与工程—环境工程]