18kV/125A碳化硅IGBT器件研制及串联应用关键技术研究  

Research on Key Technologies for Development and Series Application of 18kV/125A SiC IGBT Device

作　　者：邱宇峰 唐新灵 魏晓光 杨霏 潘艳 吴军民 李学宝 赵志斌 顾然 梁琳[4] 杨晓磊 周平 QIU Yufeng;TANG Xinling;WEI Xiaoguang;YANG Fei;PAN Yan;WU Junmin;LI Xuebao;ZHAO Zhibin;GU Ran;LIANG Lin;YANG Xiaolei;ZHOU Ping(State Key Laboratory of Advanced Power Transmission Technology(State Grid Smart Grid Research Institute Co.,Ltd.),Changping District,Beijing 102209,China;State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources(North China Electric Power University),Changping District,Beijing 102206,China;C-EPRI Electric Power Engineering Co.,Ltd.,Changping District,Beijing 102209,China;State Key Laboratory of Advanced Electromagnetic Engineering and Technology(Huazhong University of Science and Technology),Wuhan 430074,Hubei Province,China;State Key Laboratory of Wide-bandgap Semiconductor Power Electronic Devices(Nanjing Electronic Devices Institute),Nanjing 210016,Jiangsu Province,China)

机构地区：[1]先进输电技术国家重点实验室(智能电网研究院有限公司),北京市昌平区102209 [2]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206 [3]中电普瑞电力工程有限公司,北京市昌平区102209 [4]强电磁工程与新技术国家重点实验室(华中科技大学),湖北省武汉市430074 [5]宽禁带半导体电力电子国家重点实验室(南京电子器件研究所),江苏省南京市210016

出　　处：《中国电机工程学报》2023年第17期6765-6775,共11页Proceedings of the CSEE

基　　金：国家重点研发计划项目(2018YFB0905700)。

摘　　要：高压碳化硅(silicon carbide,SiC)器件因具有耐高压、耐高温、低损耗等优异特性,已成为支撑未来新型电力系统建设的新型电力电子器件。文中基于自主研制的18kV/12.5A高压SiC绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)芯片,提出18kV SiC IGBT单芯片子模组及10芯片并联封装设计方案,研制18kV/125A SiC IGBT器件,功率等级达到国际最高水平。搭建高压碳化硅功率器件绝缘、静态特性和动态特性测试平台,测试单芯片子模组及10芯片并联器件的绝缘及动态特性,18kV/125A SiC IGBT器件具备18kV静态耐压且可以在13kV直流母线电压条件下关断130A电流,验证了所研制器件的高压绝缘及高压开关能力。此外,采用18kV/125A SiC IGBT器件串联搭建24kV换流阀半桥功率模块,提出器件串联均压方法,完成半桥功率模块的1min静态耐压试验和开关试验验证,结果表明,所研制的18kV/125A SiC IGBT器件运行良好,满足串联应用要求,同时,所提的均压方案可以保证半桥功率模块静态电压不均衡和动态电压不均衡程度分别低于0.4%和15%。该研究可以为基于SiC IGBT器件在柔性直流输电工程中的应用奠定基础。High voltage silicon carbide(SiC)devices,as new power electronic devices,have been supporting the construction of new power systems because of their advantages in high voltage,high temperature and high frequency.In this paper,based on the 18kV/12.5A high-voltage SiC insulated gate bipolar transistor(IGBT)chip developed independently in China,the packaging design method of the 18kV SiC IGBT single-chip sub-module and 10-chip parallel packaging structure is proposed.The first 18kV/125A SiC IGBT device with the maximum power level in the world is developed.Then,the experimental platforms for insulation,static and dynamic characteristics of high-voltage SiC power devices are built.The insulation and dynamic characteristics of the single-chip sub-module and 10-chip paralleling device are measured.The results show that the developed 18kV/125A SiC IGBT device can withstand static voltage at 18kV and can turn off at 13kV/130A,which verifies the high-voltage insulation and high-voltage switching ability of the developed device.In addition,the developed 18kV/125A SiC IGBT devices are used in series to build the 24kV converter valve half bridge module.The corresponding series voltage equalization method is proposed.Finally,the 1min static voltage withstand test and switching verification of half bridge module are conducted.The results show that the developed 18kV/125A SiC IGBT devices can meet the requirements of series application.At the same time,the proposed voltage sharing method can ensure that the static voltage and dynamic voltage imbalances of the half bridge module are less than 0.4%and 15%,respectively.The presented results in this paper can lay a foundation for the application of SiC IGBT devices in flexible DC transmission systems.

关 键 词：碳化硅 绝缘栅双极型晶体管器件 封装绝缘 动态特性 串联均压 

分 类 号：TM85[电气工程—高电压与绝缘技术]