Planar InAlAs/InGaAs avalanche photodiode with 360 GHz gain×bandwidth product  

作　　者：王帅 叶焓 耿立妍 肖帆 褚艺渺 郑煜 韩勤 Shuai Wang;Han Ye;Li-Yan Geng;Fan Xiao;Yi-Miao Chu;Yu Zheng;Qin Han(Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2023年第9期103-107,共5页中国物理B（英文版）

基　　金：the National Key R&D Program of China(Grant No.2020YFB1805701);the National Natural Foundation of China(Grant No.61934003)。

摘　　要：This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode(APD)by computational simulations and experimental results.The APD adopts the structure of separate absorption,charge,and multiplication(SACM)with top-illuminated.Computational simulations demonstrate how edge breakdown effect is suppressed in the guardringfree structure.The fabricated APD experiment results show that it can obtain a very low dark current while achieving a high gain×bandwidth(GB)product.The dark current is 3 nA at 0.9Vb r,and the unit responsivity is 0.4 A/W.The maximum3 dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for the fabricated APD operating at 1.55μm.

关 键 词：avalanche photodiode PLANAR gain×bandwidth product dark current 

分 类 号：TN312.7[电子电信—物理电子学]