高压二极管阻断I-V特性研究  

Research on Blocking I⁃V Characteristics of High⁃voltage Diode

作　　者：赖桂森 谢桂泉[1] 郭卫明[1] 王晨涛 焦石 洪波 张磊 LAI Guisen;XIE Guiquan;GUO Weiming;WANG Chentao;JIAO Shi;HONG Bo;ZHANG Lei(Guangzhou Bureau of UHV Transmission Company of China Southern Power Grid Co.,Ltd.,Guangzhou,510000,CHN;Xuji Electric Co.,Ltd.,Xuchang,Henan,461000,CHN;Xi'an PERI Power Semiconductor Converter Technology Co.,Ltd.,Xi'an,710077,CHN)

机构地区：[1]中国南方电网有限责任公司超高压输电公司广州局,广州510000 [2]许继电气股份有限公司,河南许昌461000 [3]西安派瑞功率半导体变流技术股份有限公司,西安710077

出　　处：《固体电子学研究与进展》2023年第4期302-305,323,共5页Research & Progress of SSE

基　　金：中国南方电网有限责任公司科技资助项目(010100KK52220006);中央引导地方科技资助项目(2022ZY2-YS-04)。

摘　　要：针对高压二极管在终端工艺中出现的3种阻断I-V特性进行了相关测试分析,通过TCAD模拟仿真,结合器件内部电场和漏电流分布,理论研究了3种不同终端负斜角角度对其阻断I-V特性的影响,阐述了导致器件击穿电压降低和软击穿的本质机理。研究结果表明,当终端负斜角θ<1°时,器件获得了低电压的硬击穿特性;当1°≤θ<3°时,器件可获得最佳阻断电压的硬击穿特性。导致硬击穿的本质原因是峰值电场位于有源区边界或靠近边界的位置。对于θ≥3°,高的峰值电场靠近终端区斜角表面边缘而导致I-V呈软击穿特性。In this paper,three kinds of blocking I-V characteristics in the termination process of high-voltage diode were tested and analyzed.By TCAD simulation,the influences of three different termination negative angles on the I-V characteristics were theoretically studied combined with the dis⁃tribution of electric field and leakage current in the device,and the essential mechanism of the break⁃down voltage reduction and soft breakdown of the device was described.The research results show that the device achieves low voltage and hard breakdown characteristics with the terminal negative slopeθ<1°.The device can obtain the hard breakdown characteristic of the best blocking voltage with 1°≤θ<3°.The essential reasons for hard breakdowns are that the peak electric fields are located at or near the boundary of the active region.Forθ≥3°,the high peak electric field is close to the edge of the bevel surface of the termination region,resulting in soft breakdown of I-V.

关 键 词：高压二极管 击穿电压 电场 

分 类 号：TN34[电子电信—物理电子学]