等离子体化学气相沉积工艺调控铜基-石墨烯复合薄膜材料微结构及电学热学性能研究  

Synergistic tuning of microstructure,electrical,and thermal properties of Cu-graphene films as-grown by plasma-enhanced chemical vapor deposition

作　　者：白雪园 刘显波 陈龙庆[3] 王正上 杨勇飞 郑洲 BAI Xue-Yuan;LIU Xian-Bo;CHEN Long-Qing;WANG Zheng-Shang;YANG Yong-Fei;ZHENG Zhou(Institute of Chemical Materials,China Academy of Engineering Physics,Mianyang 621900,China;Public Safety Laboratory,Sichuan Police College,Luzhou 646000,China;Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,China;Sichuan Research Center of New Materials,Chengdu 610000,China)

机构地区：[1]中国工程物理研究院化工材料研究所,绵阳621900 [2]四川警察学院公共安全实验室,泸州646000 [3]四川大学原子核科学技术研究所教育部辐射物理与技术重点实验室,成都610064 [4]四川省新材料研究中心,成都610000

出　　处：《四川大学学报（自然科学版）》2023年第5期190-196,共7页Journal of Sichuan University(Natural Science Edition)

基　　金：化工材料研究所学科基金(2021SJYBXM0217)。

摘　　要：本文利用等离子体化学气相沉积PECVD(Plasma-Enhanced Chemical Vapor Deposition)技术制备了铜基-石墨烯复合薄膜,通过X射线衍射及Raman光谱证实了低温合成的可行性.同时,逐步研究压强、功率、气流量、基底温度等关键参数对沉积速率的影响,实现了对薄膜材料厚度和生长过程的准确控制.进一步研究发现,H_(2)与CH_(4)的气体比例严重影响了等离子体与基底表面的相互作用,并导致了材料表面微观结构和粗糙度的协同改变.通过工艺参数和气体配比的优化,实现了对薄膜表面结构的有效调节.当H_(2)/CH_(4)为1:12时,薄膜的粗糙度最低,电子与声子的散射源被充分抑制,电导率和热导率分别达到8.3×10^(6)S/cm与158 W/m·K,表明该材料具有良好的导电性及优秀的散热效果.本文系统优化PECVD生产过程中的各项关键工艺参数,并详细分析了气体配比、表面结构、粗糙度及薄膜宏观物性之间的关联,为铜基-石墨烯复合薄膜的工业化生产和商业化应用提供了理论支撑和实验依据.In this work,Cu-graphene composite films were prepared by the plasma-enhanced chemical vapor deposition(PECVD).The feasibility of the low-temperature synthesis was confirmed through X-ray diffraction and Raman spectroscopies.Simultaneously,influences of such key parameters as the pressure,power,gas flow rate,and substrate temperature on the deposition rate were systematically investigated,and precise controls of the film thickness and growth process were achieved.Moreover,the gas ratio of H_(2)to CH4 was demonstrated to seriously influence the interaction between the plasma and the substrate surface,resulting in a synergistic change of the material surface microstructure and roughness.The surface structures of the thin films were modulated effectively by optimizing the technical parameters and gas composition.The roughness of the film prepared at the H_(2)/CH_(4)ratio of 1:12 is the lowest,and the electrical and thermal conductivities are 8.3×10^(6)S/cm and 158 W/m·K,respectively,meaning significant suppression of electronic and phononic scattering.This indicates that this material has properties of outstanding conductivity and heat dissipation.In this paper,the key technical parameters in PECVD were methodically optimized and the relationships among the gas composition,surface structure,roughness,and macroscopic properties of the thin films were analyzed,which offer theoretical supports and experimental evidence for industrial production and commercial application of Cu-graphene composite thin films.

关 键 词：PECVD 铜膜 石墨烯 电导率 

分 类 号：O484.1[理学—固体物理]