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作 者:王成立 蔡佳辰 周李平 伊艾伦 杨秉承 秦源浩 张加祥 欧欣[1,2] Wang Chengli;Cai Jiachen;Zhou Liping;Yi Ailun;Yang Bingcheng;Qin Yuanhao;Zhang Jiaxiang;Ou Xin(National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)
机构地区:[1]中国科学院上海微系统与信息技术研究所集成电路材料全国重点实验室,上海200050 [2]中国科学院大学材料科学与光电技术学院,北京100049
出 处:《光学学报》2023年第16期277-294,共18页Acta Optica Sinica
基 金:国家重点研发计划(2022YFA1404601);国家自然科学基金(62293520,62293521,12074400,62205363);中国科学院稳定支持基础研究领域青年团队计划(YSBR-69);上海市“科技创新行动计划”基础研究领域项目(20JC1416200,22JC1403300)。
摘 要:凭借优异的材料与光学特性,第三代半导体——碳化硅材料在集成光子学领域发展迅速并获得广泛关注。当前碳化硅材料正逐渐发展为可与CMOS工艺兼容的优异光子学材料平台。受益于高非线性系数和低光学损耗特性,碳化硅材料已广泛应用于多种片上非线性光学效应的实现,如高效二次谐波、快速电光调制和孤子光学频率梳产生等。同时与金刚石类似,碳化硅材料具有性能优异的二能级固体自旋色心,基于碳化硅色心与谐振腔的腔量子电动力学效应在近年来也得到广泛研究。综合近几年来国内外在碳化硅光子学上的研究现状,介绍碳化硅在集成非线性光学和集成量子光学领域中的最新研究进展,并就碳化硅光子学的未来发展趋势进行展望和讨论。Significance The industrialization in the fields of telecommunications,artificial intelligence,and the Internet of Things has steadily progressed.With the increasing demand for information transmission and data processing in these fields,it is not sustainable anymore to optimize processing speed only via increase in integration density and miniaturization of transistors,which are limited by the laws of physics,design complexity,and cost.Therefore,complementing the current lack of processing speed by other novel technologies is being widely discussed.Integrated photonics,which uses photons as information carriers,can be an alternative to meet the aforementioned requirements.Compared with traditional electrical circuits,photon integrated circuits leverage micro and nanoscale optical components to realize light transmission,which offer several prominent features such as high bandwidth,low power consumption,and ultrahigh transmission speed.Specifically,on-chip photonic systems can be used to host high-Q resonant cavities for enhancing light-matter interaction owing to the unique physical characteristics of photons and advanced manufacturing techniques.This in turn paves the way for applications in nonlinear photonics and quantum photonics.Thus far,many manufacturing processes have been established for integrated photonics on various material platforms such as silica,Ⅲ-Ⅴcompound semiconductors,silicon,silicon nitride,and lithium niobate.Of these platforms,siliconintegrated photonics has remarkably progressed owing to mature manufacturing techniques for Si-based integrated circuits,whereas the absence of photoelectric characteristics and the high propagation loss are not beneficial for establishment of configurable photonic systems.Lithium niobate,which is considered a promising platform for integrated photonics,has been applied in ultrafast optical modulation and microwave photonics because of its remarkable attributes of second-and third-order nonlinearities and low optical loss;however,one must consider that its
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