基于MEMS工艺的平行激励磁通门原理及仿真设计  

Principle and simulation design of parallel excitation fluxgate based on MEMS technology

作　　者：王梦佳 李晓宇 彭根斋 张芦[1] 张志红 俞健 尹泓卜 WANG Meng-jia;LI Xiao-yu;PENG Gen-zhai;ZHANG Lu;ZHANG Zhi-hong;YU Jian;YIN Hong-bu(Southwest Institute of Applied Magnetics,Mianyang 621000,China;Research Center of Advanced Material Testing Technology,Shenzhen Technology University,Shenzhen 518118,China;Science and Technology on Reactor System Design Technology Laboratory,Nuclear Power Institute of China,Chengdu 610213,China)

机构地区：[1]西南应用磁学研究所,四川绵阳621000 [2]深圳技术大学先进材料测试技术研究中心,广东深圳518118 [3]中国核动力研究设计院核反应堆系统设计技术重点实验室,四川成都610213

出　　处：《磁性材料及器件》2023年第5期51-56,共6页Journal of Magnetic Materials and Devices

基　　金：四川省科技计划资助项目(2021YFG0015)。

摘　　要：介绍了一种平行激励MEMS磁通门的原理,并通过COMSOL多物理场仿真软件对其进行建模计及仿真分析,分别考察激励电流、被测磁场以及被测磁场频率对磁通门感应电压的影响。结果表明,感应电压二次谐波幅值随被测磁场的增高近似呈线性增大,磁通门磁场测量范围大于±100μT,频带范围大于DC~10 kHz,感应电压二次谐波幅值随激励电流的增大先增后降,最佳激励电流为37 mA,此时磁通门的感应电压最高,灵敏度最大,达1556.4 V/T。The principle of a parallel excitation MEMS fluxgate is introduced,and the modeling design and simulation analysis of the fluxgate are carried out through COMSOL multiphysics simulation software.The effects of excitation current,magnitude and frequency of measured magnetic field on the induced voltage of the fluxgate are studied respectively.The results show that the amplitude of the second harmonic of the induced voltage increases approximately linearly with the increase of the measured magnetic field.The measurement range of magnetic field of the fluxgate is wider than±100μT,and the measurement range of frequency is broader than DC to 10 kHz.The amplitude of the second harmonic of the induced voltage increases first and then decreases with the increase of the excitation current.The optimal excitation current is 37 mA,when the induced voltage of the fluxgate is the highest and the sensitivity is the largest(1556.4 V/T).

关 键 词：磁通门 MEMS 平行激励 原理 仿真 

分 类 号：TH122[机械工程—机械设计及理论] TP212[自动化与计算机技术—检测技术与自动化装置]