晶硅异质结太阳电池nc-Si:H/nc-SiOx:H叠层窗口层研究  

RESEARCH ON nc-Si:H/nc-SiOx:H STACKED THIN FILMS AS SILICON HETEROJUNCTION SOLAR CELLWINDOW LAYER

作　　者：杨煜豪 刘文柱[2] 张丽平[2] 孟凡英[2] 高彦峰[1] 刘正新[2] Yang Yuhao;Liu Wenzhu;Zhang Liping;Meng Fanying;Gao Yanfeng;Liu Zhengxin(School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China;Research Center for New Energy Technology(RCNET),Shanghai Institute of Microsystem and Information Technology(SIMIT),Chinese Academy of Sciences(CAS),Shanghai 201800,China)

机构地区：[1]上海大学材料科学与工程学院,上海200444 [2]中国科学院上海微系统与信息技术研究所新能源中心,上海201800

出　　处：《太阳能学报》2023年第8期203-207,共5页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(62004208);国家自然科学基金(62074153);中国科学院“鸿鹄专项”(XDA17020403);上海市科技创新行动(22ZR1473200)。

摘　　要：该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧(nc-Si Ox:H)薄膜,应用于晶硅异质结(SHJ)太阳电池的窗口层以替代传统的氢化非晶硅(a-Si:H)薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 m A/cm^(2),达到38.5 m A/cm^(2),填充因子为82.7%,光电转换效率为23.5%。实验发现,在nc-Si Ox:H薄膜沉积前对本征非晶硅层表面进行处理,沉积1 nm纳米晶硅(nc-Si:H)种子层,可改善nc-Si Ox:H薄膜的晶化率,降低薄膜中的非晶相含量。与单层nc-Si Ox:H窗口层的电池相比,nc-Si:H/nc-Si Ox:H叠层结构提高电池填充因子,达到83.4%,光电转换效率增加了0.3%,达到23.8%。In this work,the highly conductive,highly transparent phosphorus-doped hydrogenated nanocrystalline silicon oxide(nc-SiOx:H)film is prepared,which is successfully applied as the window layer of silicon heterojunction(SHJ)cells to replace the traditional hydrogenated amorphous silicon(a-Si:H)film.Compared with the cell with a-Si:H thin film as the window layer,the shortcircuit current density can be increased by 0.5 mA/cm^(2)to 38.5 mA/cm^(2),the fill factor is 82.7%,and the efficiency is 23.5%.In addition,the intrinsic amorphous silicon layer was surface treated before nc-SiOx:H film deposition.The deposition of 1 nm nanocrystalline silicon seed layer can improve the crystallinity of nc-SiOx:H film and reduce the content of amorphous phase in the film.Compared with the fill factor of the cell with nc-SiOx:H film,the fill factor of the cell with nc-Si:H/nc-SiOx:H stacked thin films is increased to 83.4%,and the efficiency increased by 0.3%to 23.8%.

关 键 词：纳米晶材料 太阳电池 薄膜生长 晶硅异质结太阳电池 纳米晶硅氧(nc-SiOx:H) 界面处理 

分 类 号：TK514[动力工程及工程热物理—热能工程]