一种用于生产的GaN HEMT器件空气桥的设计  

Design of an Air Bridge for Fabrication of GaN HEMT Devices

作　　者：石浩 王雯洁 付登源 梁宗文 王溯源[1] 张良 章军云[1] SHI Hao;WANG Wenjie;FU Dengyuan;LIANG Zongwen;WANG Suyuan;ZHANG Liang;ZHANG Junyun(China Electronics Technology Group Corporation No.55 Research Institute,Nanjing 210016,China)

机构地区：[1]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《电子与封装》2023年第9期55-59,共5页Electronics & Packaging

摘　　要：为了解决当前GaN HEMT器件空气桥起桥角度、桥胶高度不稳定且易受后续步骤影响导致桥胶坍塌的问题,通过分别改变光刻胶定型桥的烘胶温度、烘胶时间以及曝光过程中的曝光焦距,观察不同条件下光刻胶定型桥桥胶的形貌和参数,选择最优的光刻胶定型桥的制作方法。并将最优烘胶温度、最优烘胶时间以及最优曝光条件整合,设计了一种适用于生产的拱形空气桥制作方法,得到了具有良好拱形且表面光滑的高质量、稳定且适合生产的空气桥。In order to solve the problems of unstable air bridge angle and bridge glue height in current GaN HEMT devices,which are easily affected by subsequent steps and lead to bridge glue collapse,by changing the baking temperature,baking time,and exposure focal length during the exposure process of the photoresist setting bridge,the morphology and parameters of the photoresist setting bridge glue under different conditions are observed,and the optimal manufacturing method of the photoresist setting bridge is selected.The optimal baking temperature,the optimal baking time and exposure conditions are integrated to design an arch shaped air bridge production method suitable for production,and a high-quality,stable and production-suitable air bridge with a good arch shape and a smooth surface is obtained.

关 键 词：空气桥 GaNHEMT 烘胶温度 烘胶时间 曝光条件 

分 类 号：TN304.2[电子电信—物理电子学] TN305.7