不同载气对GaN薄膜外延生长影响的研究进展  

Research Progress on Eff ect of Diff erent Carrier Gases on the Epitaxial Growth of GaN

作　　者：庞博 宿星亮 Pang Bo;Su Xingliang(School of Physics and Electronics Engineering,Shanxi University,Shanxi,030006)

机构地区：[1]山西大学物理电子工程学院,山西030006

出　　处：《当代化工研究》2023年第18期8-11,共4页Modern Chemical Research

基　　金：山西省高等学校科技创新项目“基于MOCVD技术的第三代半导体量子点生长及其性质研究”(项目编号:2020L0043)。

摘　　要：氮化镓(GaN)凭借着优越的光学和电学性能使其成为新兴半导体光电产业的核心材料和基础器件,在光电子、微电子以及声电子领域中具有举足轻重的地位和广泛的应用前景。为了获得高品质GaN,对其生长条件的优化从未停止。本文综述了氮气(N2)和氢气(H2)作为载气在利用MOCVD外延生长GaN薄膜中的研究进展,讨论了不同载气的使用对生长机制、薄膜质量和GaN基器件性能的影响。从最优化工艺的角度出发,在生长过程中合理组合使用H2、N2和H2/N2混合气体为载气,并从其生长特点中优化材料性能获得最佳组合是更具优势的生长方案。Gallium nitride,with superior optical and electrical properties,has become a core material and basic device in the semiconductor optoelectronic industry,and has a pivotal role and broad application prospects in the fields of optoelectronics,microelectronics,and acoustoelectron-ics.In order to obtain high-quality GaN,the optimization of its growth method has never stopped.This article reviews the research progress of nitro-gen(N2)and hydrogen(H2)as carrier gases in the epitaxial growth of GaN films,and discusses the influence of different carrier gas on growth mecha-nism,film quality,and GaN-based device.From the perspective of optimal process,it is more advantageous to use a reasonable combination of H2,N2,and H2/N2 mixed gas as carrier gas during the growth process,the obvious conclusion is to try to use a mixture of both gases as carrier gas and ben-efit from the advantages of both.

关 键 词：GAN薄膜 外延生长 载气 氢气 氮气 薄膜质量 

分 类 号：O484[理学—固体物理]