P型阱接触布局对于单粒子瞬态脉冲宽度的影响  

Influence of P-Well Contact Layout on SingleEvent Transients Pulse Width

作　　者：陈南心 丁李利 陈伟 王坦 张凤祁 徐静妍 罗尹虹 CHEN Nanxin;DING Lili;CHEN Wei;WANG Tan;ZHANG Fengqi;XU Jingyan;LUO Yinhong(Academic Institution of Material Science and Engineer,Xiangtan University,Xiangtan,Hunan Province 411105,China;National Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Xi’an 710024,China)

机构地区：[1]湘潭大学材料科学与工程学院,湖南湘潭411105 [2]强脉冲辐射环境与模拟全国重点实验室,西安710024

出　　处：《现代应用物理》2023年第3期210-216,共7页Modern Applied Physics

基　　金：国家自然科学基金资助项目(11690043)。

摘　　要：针对40 nm体硅双阱工艺CMOS(complementary metal oxide semiconductor)反相器的单粒子瞬态敏感效应(single event transient,SET),通过3维TCAD(technology computer aided design)仿真软件模拟计算,研究了P阱接触面积对于单粒子敏感性的影响。仿真结果表明,重离子轰击N型有源区时,增大P阱接触面积可稳定器件的电势和减小双极放大效应,有效减小SET脉冲宽度;重离子轰击P型有源区时,器件受到多种效应影响,增大P阱接触面积虽能减小双极放大效应,但会产生强内建电场,加剧载流子漂移收集,导致SET脉冲宽度增加。此外,阱接触与晶体管的距离对SET脉冲宽度也有一定影响。研究结果表明,增大阱接触与晶体管之间的距离一定程度上可减小SET脉冲宽度,但在轰击P型有源区的情况下,增大阱接触与晶体管之间的距离反而会增大SET脉冲宽度。传统的加固手段对P型阱接触也有较好的作用,但在特定情况下会起到反作用。The single event transient(SET)sensitivity of a 40 nm bulk silicon double-well complementary metal oxide semiconductor(CMOS)inverter is simulated and calculated by using 3D technology computer aided design(TCAD)simulation software,and the impact of the contact area of the P-type well on single event transient sensitivity is studied.The simulation results show that when the heavy ions bombard the N-type active region,the increased contact area of the P-well can stabilize the device’s potential and reduce the bipolar amplification effect,and effectively reduce the SET pulse width.When the heavy ions bombard the P-type active region,the device is affected by multiple effects.The increased contact area of the P-well can not only reduce the bipolar amplification effect,but also generate a strong built-in electric field,which well intensify the carrier drift collection and increase the SET pulse width.In addition,the influence of the distance between the well contact and the transistor on the SET pulse width is also studied.The results show that the increased distance between the well contact and the transistor can reduce the SET pulse width to some extent,but in the case of bombarding the P-type active region,the increased distance between the well contact and the transistor will increase the SET pulse width.

关 键 词：寄生效应 单粒子效应 单粒子瞬态 TCAD仿真 

分 类 号：TN386[电子电信—物理电子学] TL99[核科学技术—核技术及应用]