碳纳米管薄膜场效应晶体管低温电学特性  

Low Temperature Electrical Characteristics of Carbon Nanotube Thin Film Field Effect Transistors

作　　者：张静[1] 李梦达 朱慧平 王磊[2,3] 彭松昂[2] 陆芃[2,3] 李晓静 王艳蓉 李博[2,3] 闫江 ZHANG Jing;LI Mengda;ZHU Huiping;WANG Lei;PENG Songang;LU Peng;LI Xiaojing;WANG Yanrong;LI Bo;YAN Jiang(School of Information Science and Technology,North China University of Technology,Beijing 100144,China;Institute of Microelectronics,Chinese Academy of Sciences;Key Laboratory of Irradiation Resistant Device Technology,Chinese Academy of Sciences:Beijing 100029,China)

机构地区：[1]北方工业大学信息学院,北京100144 [2]中国科学院微电子研究所 [3]中国科学院抗辐照器件技术重点实验室,北京100029

出　　处：《现代应用物理》2023年第3期217-221,共5页Modern Applied Physics

基　　金：北京市教委基金委联合基金资助项目(KZ202210009014)。

摘　　要：基于网络状碳纳米管(carbon nanotube,CNT)薄膜制备了网络状碳纳米管薄膜场效应晶体管(carbon nanotube thin film field effect transistor,CNT-TFT),研究了温度为100~300 K时,CNT-TFT的电学特性,并对关键电学参数,如开态电流I_(on)、跨导G_(m)、阈值电压V_(th)和亚阈值摆幅S_(S)等,进行了深入分析。研究结果表明,随着温度的降低,G_(m)出现了下降,V_(th)向左漂移;在G_(m)和V_(th)共同作用下,I_(on)显著下降。通过对电学参数随温度演化机制的深入分析,发现器件G_(m)的降低不仅与CNT内的散射及CNT-金属接触电阻相关,而且与交叠的碳纳米管间的结电阻密切相关。同时,研究还表明,低温下,界面俘获中心对电子俘获概率的减小是引起器件V_(th)和S_(S)变化的主要因素。Carbon nanotubes(CNTs)have attracted a lot of attention from scholars as one of the most promising candidates for next-generation channel materials.However,there are few reports on the low-temperature electrical properties of carbon nanotube thin film field-effect transistors(CNT-TFTs),and the study of the mechanism of its temperature effect on electrical properties can help the application of CNT-TFTs in extreme low-temperature environments.In this paper,CNT-TFTs are prepared based on CNT network films,and the electrical characteristics of CNT-TFTs at temperatures ranging from 100 K to 300 K are investigated,and key electrical parameters,such as open-state current(I_(on)),transconductance(G_(m)),threshold voltage(V_(th)),and subthreshold swing(S_(S)),are analyzed.The research results indicate that as the temperature decreases,G_(m)decreases and V_(th)shifts to the left.The decrease in G_(m)is attributed to the combined effect of CNT scattering,CNT-metal contact resistance,and CNT-CNT junction resistance in the CNT-TFT.The changes in V_(th)and S_(S)are attributed to the decrease in the capture probability of the interface capture center at low temperatures.

关 键 词：碳纳米管薄膜场效应晶体管 低温 电学特性 散射 界面俘获中心 

分 类 号：O484[理学—固体物理] TN321[理学—物理]