Structural Characterization of Carbon-implanted GaSb  

作　　者：SHEN Guiying ZHAO Youwen HE Jianjun 

机构地区：[1]Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China [2]College of materials science and opto-electronic technology,University of Chinese Academy of Sciences,Beijing,100049,China [3]Rugao Institute of Compound Semiconductor Industry,Jiangsu,226500,China

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2023年第5期969-973,共5页武汉理工大学学报（材料科学英文版）

基　　金：the National Natural Science Foundation of China(No.61904175);Jiangsu Provincial Key Research and Development Program(No.BE2020033)。

摘　　要：Ion implantation induced damage in GaSb and its removal by rapid thermal annealing(RTA)have been investigated by Raman spectroscopy.The evolution of the Raman modes as a function of implantation fluence,annealing temperature and time has been analyzed.Results indicate that a lattice quality that is close to as-grown GaSb has been obtained by annealing the implanted samples at 500℃for 45 s.However,consequent surface analyses by scanning electron microscope(SEM)and atomic force microscope(AFM)show that a heavily perturbed layer contains voids due to the outdifiusion of Sb atoms on the surface remains.Mechanism of the damage recovery and the structure of the implanted layer are discussed based on the experimental results.

关 键 词：Ion implantation Raman spectroscopy GASB RTA 

分 类 号：TN3[电子电信—物理电子学]