1.55μm脊波导大功率DFB激光器的研究  

Research of High Power 1.55μm Ridge Waveguide Laser

作　　者：魏树威 朱尧 周志强 黄楚云[1] WEI Shuwei;ZHU Yao;ZHOU Zhiqiang;HUANG Chuyun(School of Science,Hubei Univ.of Tech.,Wuhan 430068,China;Wuhan Mindsemi Company Limited,Wuhan 430068,China)

机构地区：[1]湖北工业大学理学院,湖北武汉430068 [2]武汉敏芯半导体股份有限公司,湖北武汉430068

出　　处：《湖北工业大学学报》2023年第5期48-51,共4页Journal of Hubei University of Technology

摘　　要：为了提高1.55μm波段DFB激光器的输出性能及高温特性,制作了两种不同结构的InAlGaAs/InP大光腔激光器。两种激光器芯片均在外延设计上采用非对称结构,能够有效减少器件内吸收损耗,从而提高输出功率。对两种芯片均进行了不同腔长、发散角及高温性能测试,可以观测到采用较厚n侧限制层的芯片的输出功率更大。In order to improve the output performance and high temperature characteristics of 1.55μm DFB lasers,two kinds of InAlGaAs/InP large cavity lasers with different structures are fabricated.The asymmetric structure is adopted in the epitaxy design of the two kinds of lasers,which can effectively reduce the absorption loss in the device and increase the output power.Both chips have been tested for different cavity length,divergence angle and high temperature performance.It can be observed that the output power of the chips with a thicker n-sch layer is higher.

关 键 词：大功率激光器 InAlGaAs 高温特性 脊波导结构 非对称波导 

分 类 号：TN248.4[电子电信—物理电子学]