后摩尔时代芯片互连新材料及工艺革新  

Revolution of next-generation interconnect materials and keyprocesses for advanced chips in post-moore era

作　　者：张思勉 邓晓楠 王宇祺 武逸飞 刘佳宁 李正操[1,3,4] 蔡坚 王琛[1,3,4,5] Simian Zhang;Xiaonan Deng;Yuqi Wang;Yifei Wu;Jianing Liu;Zhengcao Li;Jian Cai;Chen Wang(School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China;School of Integrated Circuits,Tsinghua University,Beijing 100084,China;State Key Laboratory of New Ceramics and Fine Processing,Tsinghua University,Beijing 100084,China;Key Laboratory of Advanced Materials of Ministry of Education,Tsinghua University,Beijing 100084,China;Beijing Advanced Innovation Center for Integrated Circuits,Beijing 100084,China)

机构地区：[1]清华大学材料学院,北京100084 [2]清华大学集成电路学院,北京100084 [3]新型陶瓷与精细工艺国家重点实验室,北京100084 [4]先进材料教育部重点实验室,北京100084 [5]集成电路高精尖创新中心,北京100084

出　　处：《中国科学：化学》2023年第10期2027-2067,共41页SCIENTIA SINICA Chimica

基　　金：国家重点研发计划(编号:2021YFA1200800);国家自然科学基金(编号:62004114,62174098);清华大学自主科研计划;北京市科技计划(Z221100005822011);北京高校高精尖创新中心建设资助项目。

摘　　要：受高算力芯片的需求驱动,尽管摩尔定律日趋减缓,高端芯片的工艺复杂度和集成度仍在逐代增大.随着前道工艺中晶体管架构与其集成密度不断优化提升,后道工艺所涉及的芯片内互连技术挑战愈发严峻,迫切需要对互连材料与工艺进行革新.同时,高集成度的系统级3D封装也是高性能芯片的关键解决方案,其中核心的3D封装技术对芯片间互连材料与工艺不断提出新的要求.为此,本文系统探讨了后摩尔时代芯片内和芯片间多代候选互连材料及其工艺的潜力及挑战,从材料创新、工艺优化、架构突破、设计范式等多方面综合研判了未来互连技术的发展路径,并对超导互连、光互连等颠覆性互连技术做了前瞻性分析,可以预见互连材料的革新将有力推动新的芯片技术革命.Although Moore’s Law is slowing down,driven by the demand for high-performance computing,the complexity and integration of high-end chips are still increasing generation by generation.As the transistor architecture and its integration density in the front-end-of-line process continue to be optimized and improved,the challenges of back-end-of-line in-chip interconnect technology have becoming severe.Thus original innovation is urgently needed for next generation interconnect materials and processes.At the same time,highly integrated system-level 3D packaging is another key solution for high-performance chips,and the core 3D packaging technology imposes new requirements on chip-to-chip interconnect materials and processes.So this review systematically examines the potential and challenges of multi-generation candidate of interconnect materials and their processes within and between chips in the post-Moore era,and comprehensively analyze the development of future interconnect technologies from multiple dimensions such as material innovation,process optimization,architecture breakthroughs,and design paradigms.It also makes projection of disruptive interconnect technologies such as superconducting interconnects and optical interconnects.It is strongly believed that the innovation of interconnection material technology will effectively promote the revolution of chips in post-Moore era.

关 键 词：高端芯片 互连材料 先进封装 工艺革新 超导互连 光互连 

分 类 号：TN405[电子电信—微电子学与固体电子学]