碳化硅沟槽栅MOSFET技术研究进展  

A review on research development of SiC trench gate MOSFET technology

作　　者：罗海辉 李诚瞻 姚尧 杨松霖 LUO Haihui;LI Chengzhan;YAO Yao;YANG Songlin(Zhuzhou CRRC Times Semiconductor Co.,Ltd.,Zhuzhou,Hunan 412001,China;State Key Laboratory of Power Semiconductor and Integration Technology,Zhuzhou,Hunan 412001,China)

机构地区：[1]株洲中车时代半导体有限公司,湖南株洲412001 [2]功率半导体与集成技术全国重点实验室,湖南株洲412001

出　　处：《机车电传动》2023年第5期10-25,共16页Electric Drive for Locomotives

基　　金：湖南省科技重大项目(2021GK1180)。

摘　　要：第三代宽禁带半导体碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)具备耐高压、耐高温和低损耗等优点,迅速成为行业的研究热点。文章结合SiC功率MOSFET器件发展历史,探讨了从平面栅技术发展到沟槽栅技术的必要性,介绍了SiC沟槽栅MOSFET结构设计、沟槽刻蚀工艺和沟槽栅氧工艺等核心问题的研究进展与技术挑战,并对未来新型SiC沟槽栅MOSFET技术进行了展望。The third-generation wide-bandgap semiconductor silicon carbide(SiC)MOSFET devices have rapidly become a re‐search hotspot in the production and research sectors due to their advantages,such as high voltage resistance,high-temperature resistance and low loss.This paper,in conjunction with the development history of SiC MOSFET devices,discussed the necessity of transitioning from planar gate technology to trench gate technology.It elaborated on the technical challenges and research progress related to SiC trench gate MOSFET structure design,trench etching processes,trench gate oxide processes and other core issues.Finally,it provided an outlook for future advanced SiC trench gate MOSFET technology.

关 键 词：碳化硅 沟槽栅MOSFET 沟槽工艺 沟槽栅氧 沟槽结构 新型沟槽 

分 类 号：TN304.24[电子电信—物理电子学]