基于导通饱和压降的IGBT器件结温在线提取方法  被引量:3

An online extraction method of junction temperature in IGBT devices with saturation voltage drop

在线阅读下载全文

作  者:王泽群 田小宇 宋致儒 宋文胜[1] WANG Zequn;TIAN Xiaoyu;SONG Zhiru;SONG Wensheng(School of Electrical Engineering,Southwest Jiaotong University,Chengdu,Sichuan 611756,China)

机构地区:[1]西南交通大学电气工程学院,四川成都611756

出  处:《机车电传动》2023年第5期170-176,共7页Electric Drive for Locomotives

基  金:国家级学生科研训练计划项目(202210613032)。

摘  要:绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor,IGBT)模块的结温与工作性能、寿命及其可靠性密切相关,实现IGBT结温在线监测对电力电子系统可靠性提升与服役寿命的延长有着重要意义。文章基于IGBT的导通压降,分别构建了小电流和大电流饱和压降法结温监测模型和测量电路,实现IGBT结温的精确在线监测。首先,结合IGBT的工作原理,推导了导通压降的表达式;然后,根据小电流和大电流饱和压降的特点,分别建立了其结温监测模型;最后,设计了小电流恒流源电路和导通压降采样电路,并进行试验验证。试验结果表明:小电流饱和压降与IGBT结温呈线性关系,大电流饱和压降与结温呈非线性关系,并且二者实现结温监测的误差分别为1.29%和4.91%。The junction temperature,working performance,lifespan,and reliability of insulated gate bipolar transistor(IGBT)mod‐ules are closely related.Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability and extend the service life of power electronic systems.Based on the conduction voltage drop of IGBT,this paper proposed a model and a measuring circuit for monitoring the junction temperature by low-current and high-current saturation voltage drops to achieve accurate online monitoring of IGBT junction temperature.Firstly,combined the operating principle of IGBT,the paper derived the expression for the conduction voltage drop.Then,according to the characteristics of low-current and high-current saturation voltage drop,the junction temperature monitoring models was established.Finally,it designed a low-current constant current source circuit and a conduction volt‐age drop sampling circuit,and conducted experiments to verify the models.The experimental results show that the low-current saturation voltage drop is linearly related to the IGBT junction temperature,while the high-current saturation voltage drop is nonlinearly related.The measurement errors for both methods are 1.29%and 4.91%respectively.

关 键 词:IGBT模块 导通压降 结温测量 小电流下的饱和压降法 大电流下的饱和压降法 

分 类 号:TN325.2[电子电信—物理电子学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象