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作 者:沈乐昀 张涛[1] 刘云泽 吴慧珊 王凤志 潘新花[1,2] 叶志镇 SHEN Leyun;ZHANG Tao;LIU Yunze;WU Huishan;WANG Fengzhi;PAN Xinhua;YE Zhizhen(State Key Laboratory of Silicon and Avanced Semiconductor Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310058,China;Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials,Institute of Wenzhou,Zhejiang University,Wenzhou 325006,Zhejiang,China)
机构地区:[1]浙江大学材料科学与工程学院,硅及先进半导体材料全国重点实验室,杭州310058 [2]浙江大学温州研究院,温州市光电及纳米新材料重点实验室,浙江温州325006
出 处:《材料工程》2023年第10期13-26,共14页Journal of Materials Engineering
基 金:国家自然科学基金项目(51972283,91833301);浙江省重点研究计划(2021C01030)。
摘 要:β-Ga_(2)O_(3)是一种超宽禁带半导体材料,对应太阳光谱的深紫外波段,可用于制备日盲紫外探测器。日盲紫外探测器抗干扰能力强、探测灵敏度高、背景噪声低,在军事和航空航天领域具有极大的应用前景。本文主要介绍Ga_(2)O_(3)材料的基本性质,包括不同的晶相结构及其制备方法,并总结不同结构的Ga_(2)O_(3)器件在日盲紫外探测领域的研究进展。其中,金属-半导体-金属(MSM)结构的Ga_(2)O_(3)器件最为普遍,特别是基于薄膜材料的器件已具备了商业化参数,有望实现产业化应用。基于Ga_(2)O_(3)的异质结和肖特基结日盲紫外探测器也表现出优异的性能,并呈现出自供电特性。此外,薄膜晶体管结构Ga_(2)O_(3)器件结合MSM结构和晶体管结构的工作机制,可获得更大的光增益,适用于微弱信号的探测,成为一种极具潜力的日盲紫外探测器件。Ga_(2)O_(3) is an ultra-wide band semiconductor corresponding to the deep ultraviolet(UV) spectrum,which can be used to prepare solar-blind UV detectors.The solar-blind ultraviolet detectors are widely used in military and aerospace fields dueto strong anti-interference ability,high detection sensitivity and low background noise.The basic properties of Ga_(2)O_(3) materials,including different crystal structures and their preparation,and the recent progress in solar-blind UV detectors based on Ga_(2)O_(3) were introduced in this paper.Among them,metal-semiconductor-metal(MSM) structure of Ga_(2)O_(3) devices are the most common,which are expected to achieve business application with commercial parameters.The Ga_(2)O_3-based heterostructure and Schottky detectors also exhibit excellent performance and self-supply characteristics.In addition,Ga_(2)O_(3) devices based on thin film transistor become a potential solar-blind ultraviolet detector.They combine the working mechanism of MSM and transistor structure to obtain high light gain,which are suitable for weak signal detection.
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