GaAs-based resonant tunneling diode:Device aspects from design,manufacturing,characterization and applications  

作　　者：Swagata Samanta 

机构地区：[1]Department of Electronics and Communication Engineering,SRM University-AP,Andhra Pradesh,India

出　　处：《Journal of Semiconductors》2023年第10期26-35,共10页半导体学报（英文版）

摘　　要：This review article discusses the development of gallium arsenide(GaAs)-based resonant tunneling diodes(RTD)since the 1970s.To the best of my knowledge,this article is the first review of GaAs RTD technology which covers different epitaxialstructure design,fabrication techniques,and characterizations for various application areas.It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments,as well as have an outlook on the current trends and future developments in GaAs RTD research.

关 键 词：gallium arsenide MICROFABRICATION resonant tunneling devices 

分 类 号：TN31[电子电信—物理电子学]