钝化层及P型基底结构优化对电子轰击型有源传感器电荷收集效率影响的研究  

Influence of Passivation Layer and P⁃Type Base Structure Optimization on Charge Collection Efficiency of Electron Bombardment Active Pixel Sensor

作　　者：宋园园 宋德[1] 李野[1] 陈卫军 刘春阳 Song Yuanyuan;Song De;Li Ye;Chen Weijun;Liu Chunyang(College of Science,Changchun University of Science and Technology,Changchun 130022,Jilin,China)

机构地区：[1]长春理工大学物理学院,吉林长春130022

出　　处：《中国激光》2023年第18期232-240,共9页Chinese Journal of Lasers

基　　金：国家自然科学基金联合“叶企孙”科学基金(U2141239);吉林省教育厅2021年度科学技术研究规划重点项目(JJ⁃KH20210800KJ);吉林省产业创新专项资金项目(2019C043-6)。

摘　　要：为获得高增益的电子轰击型有源传感器(EBAPS),对EBAPS成像器件中电子倍增层的电荷收集效率的影响因素进行了研究。基于载流子输运理论,采用蒙特卡罗方法研究了钝化层种类、厚度、入射电子能量、P型基底厚度和掺杂浓度对二次电子分布及收集的影响。结果表明:为提高入射电子的入射深度进而提高电荷收集效率,宜采用密度小的SiO_(2)作为钝化层;为了减少钝化层对倍增电子的复合进而提高电荷收集效率,宜降低钝化层厚度和提高入射电子能量;为了降低倍增电子扩散过程中载流子的复合进而提高电荷收集效率,宜降低P型基底的厚度和掺杂浓度。Objective Currently,in the information age,the realization of low light level digital night vision technology that can satisfy the remote transmission requirements of image information is urgently needed.The electron bombardment-type low light level imaging devices,namely,electron bombarded charge-coupled devices(EBCCDs)and electron bombarded complementary metal-oxide semiconductors(EBCMOSs),are used to package the back thinned charge-coupled devices(CCDs)and complementary metal-oxide semiconductor(CMOS)devices into an electric vacuum device.Accordingly,the chip replaces the microchannel plate and fluorescent screen to form a close proximity focusing system with the photocathode.Photoelectrons generated by the photocathode are accelerated by a high-voltage electric field and bombarded on the surface of the imaging device for direct imaging,which has many advantages,such as small size,high sensitivity,and ultra-low illumination.The processing steps in such imaging devices can be described as core making,back support,thinning,back processing,and tube sealing.Compared with EBCCDs,EBCMOSs,which are low light level imaging devices based on electron bombarded active pixel sensors(EBAPSs),have smaller size,faster imaging speed,low power consumption,and strong radiation resistance.Therefore,EBCMOS-based low light level night vision technology has become a popular research topic in the industry.Obtaining a high-gain EBCMOS electron multiplier layer is one of the key challenges in the development of EBCMOS low-light-level imaging devices.However,few relevant theoretical studies have been conducted to date.Therefore,this study focuses on the factors affecting the charge collection efficiency of electron multipliers in EBAPS imaging devices and builds a theoretical and technical foundation for constructing a high-gain EBCMOS electron multiplier.Methods Based on the carrier transport theory and Monte Carlo simulation algorithm,a calculation model of the electron transport process in the passivation and electron multiplication

关 键 词：材料 传感器 电子轰击有源像素传感器 均匀掺杂 电子倍增层 钝化层 电荷收集效率 

分 类 号：TN223[电子电信—物理电子学]