InGaN 基蓝光激光器p 型波导层和有源区优化研究  

Research on Optimization of p-Type Waveguide Layer and Active Regionof InGaN-Based Blue Laser Diodes

作　　者：石澜 李书平 Shi Lan;Li Shuping(College of Physical Science and Technology,Xiamen University,Xiamen 361005,Fujian,China)

机构地区：[1]厦门大学物理科学与技术学院,福建厦门361005

出　　处：《激光与光电子学进展》2023年第17期272-277,共6页Laser & Optoelectronics Progress

基　　金：国家重点研发计划(2016YFB0400801,2016YFB0400800)。

摘　　要：为了进一步提升蓝光激光器的性能,基于实验样品结构,详细研究了不同结构的p型波导层和有源区的组合对InGaN基边发射蓝光激光器性能的影响。利用PICS3D软件模拟计算其光输出功率-电流-电压特性曲线、能带结构、载流子电流密度分布、激射复合率等光电特性。结果表明,In组分渐变的p型波导层和前两个量子垒层、最后一个量子垒层使用AlGaN材料的新结构,可以很好地抑制电子泄漏,增加空穴注入,提高受激辐射复合率,从而提升蓝光激光器的发光效率。在1.5 A注入电流下,新结构的光输出功率可达2.69 W,相较标准结构提升了47.8%。In order to further improve the performance of blue laser,the influence of the combination of p-type waveguide layer and active region on the performance of InGaN-based edge-emitting blue laser is studied in detail based on the experimental sample structure.Simulation software named PICS3D is used to simulate these blue lasers and to compare their electrical and optical characteristics including light output power-current-voltage characteristic curve,band structures,carrier current density distributions,and stimulated recombination rates.The results show that by using the novel structure of In-composition graded p-type waveguide and the first two quantum barriers,and the last quantum barrier uses the AlGaN material,the blue laser diode can restrain the electron leakage,increase the hole injection and stimulated recombination rate,and thus improve the performance of blue laser diodes.Under 1.5 A injection current,the light output power can reach 2.69 W,which is 47.8%higher than the standard structure.

关 键 词：激光器 蓝光激光器 INGAN 波导层 有源区 

分 类 号：TN248[电子电信—物理电子学]