液相外延碲镉汞中砷离子注入与激活表征研究  

Characterization of As Ion Implantation and Activation in LPE-grown HgCdTe

作　　者：卢致超 林春[1] 王溪[1] 李珣 孙权志[1] LU Zhichao;LIN Chun;WANG Xi;LI Xun;SUN Quanzhi(Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,CHN;School of Information Science and Technology,ShanghaiTech University,Shanghai 201210,CHN)

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]上海科技大学信息科学与技术学院,上海201210

出　　处：《半导体光电》2023年第4期568-572,共5页Semiconductor Optoelectronics

摘　　要：As在HgCdTe材料中具有较小的扩散系数,可以形成较为稳定的结构,广泛应用于HgCdTe的p型掺杂。在p-on-n型碲镉汞红外探测器的制备中As掺杂是重要的制备方法。针对在制备过程中存在无法精确测量As激活率的问题,提出采用低温弱p型退火辅助差分霍尔测试的方法,获得了载流子浓度分布,从而通过与SIMS测试结果对比得到长、中波液相外延HgCdTe样品中As的激活率,并分析了退火等工艺对As掺杂后激活率的影响。As has a small diffusion coefficient in HgCdTe material and can form a relatively stable structure,which is widely used in p-type doping of HgCdTe.As doping is an important method in the preparation of p-on-n type HgCdTe infrared detector.In view of the problem that the As activation rate cannot be accurately measured,a low temperature weak p-type annealing assisted hall test method is proposed to obtain the carrier concentration distribution.By comparing with the SIMS test results,the As activation rates in the long and medium wave liquid phase epitaxy HgCdTe material were obtained,and the influence of annealing and other processes on the activation rate after As doping was analyzed.

关 键 词：液相外延 碲镉汞 As离子注入 激活率 弱p型退火 

分 类 号：TN213[电子电信—物理电子学]