高质量5 in InSb单晶生长  

Growth of High-Quality 5-inch InSb Single Crystal

作　　者：董涛 赵超[1] 彭志强 折伟林[1] 贺利军 李振兴 DONG Tao;ZHAO Chao;PENG Zhi-qiang;SHE Wei-lin;HE Li-jun;LI Zhen-xing(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2023年第10期10-14,共5页Infrared

基　　金：国家自然科学基金项目(62005318)。

摘　　要：锑化铟(InSb)焦平面探测器是中波红外探测领域应用广泛的一种探测器。作为制备探测器的基础,InSb晶体材料的质量和性能显得尤为重要。近年来InSb晶体材料在向高质量大尺寸方向发展。通过多举措坩埚设计和温场条件设计,采用直拉法生长了直径大于135 mm的InSb单晶。测试结果表明,5 in晶片的位错腐蚀坑密度小于50 cm-2,双晶衍射峰的半峰宽为8.32 arcsec,晶体具有相当好的完整性。通过优化生长工艺参数,晶体生长过程中具有较为平坦的固液界面,表现出良好的径向电学均匀性。这为制备低成本和超大规模InSb红外探测器阵列奠定了基础。The Indium antimonide (InSb) focal plane detector is a kind of detector widely used in the field of medium-wave infrared detection. As the basis for preparing detectors, the quality and performance of InSb crystal materials are particularly important. In recent years, InSb crystal materials have been also developing towards high quality and large size. Through crucible design and temperature field design, InSb single crystals with a diameter greater than 135 mm were grown by the Czochralski method. The test results show that the dislocation density of the 5-inch wafer is less than 50 cm -2 , and the full width at half maxima of the double-crystal diffraction peak is 8.32 arcsec, indicating that the crystal has good integrity. By optimizing the process parameters, the crystal has a relatively flat solid-liquid interface during the growth process, showing good radial electrical uniformity. This lays a foundation for the preparation of InSb infrared detectors with low-cost and ultra-large scale arrays.

关 键 词：锑化铟 单晶 位错密度 电学均匀性 

分 类 号：TN304.2[电子电信—物理电子学]