光电性能可调的TiN薄膜及在TOPCon太阳电池的应用  

TiN THIN FILM WITH ADJUSTABLE PHOTOELECTRIC PERFORMANCE AND ITS APPLICATION IN TOPCon SOLAR CELL

作　　者：白宇 何佳龙 李君君 苏荣 陈涛[1] 俞健 Bai Yu;He Jialong;Li Junjun;Su Rong;Chen Tao;Yu Jian(School of New Energy and Materials,Southwest Petroleum University,Chengdu 610500,China)

机构地区：[1]西南石油大学新能源与材料学院,成都610500

出　　处：《太阳能学报》2023年第9期72-77,共6页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(61904154);四川省重点研发计划(2022YFG0229);成都市技术创新研发项目(2022-YF05-00384-SN)。

摘　　要：采用直流磁控溅射制备了光电性能可调的氮化钛(TiN)薄膜,TiN薄膜的透过率随沉积压强和氮气浓度升高而升高;电导率随溅射功率升高而升高、随沉积压强和氮气浓度升高而降低。TiN的可见光平均透过率为0%~60%,氮气浓度和沉积压强较低时制备的TiN薄膜具有优异的电导率(4000 S/cm)。将高电导率的TiN薄膜应用于隧穿氧化钝化接触太阳电池(TOPCon),改善了多晶硅层(Poly-Si)与银电极界面接触,提高了填充因子,为实现高效TOPCon太阳电池提供了有效途径。Titanium nitride(TiN)thin films with adjustable photoelectric properties were fabricated by DC magnetron sputtering.The results show that the transmittance of TiN thin film improves with the increase of deposition pressure and nitrogen concentration.The conductivity of the TiN films can be enhanced with the increasing sputtering power,and decreases when deposition pressure and nitrogen concentration increased.The average transmittance at wisible wavelength of TiN is 0%-60%.The TiN film prepared at low nitrogen concentration and deposition pressure shows excellent conductivity(4000 S/cm).The application of high-conductivity TiN films in Tunnel Oxide Passivated Contact(TOPCon)solar cells,which improved the contact between the polycrystalline silicon(Poly-Si)layer and the silver electrode,thus increased the fill factor,providing an effective way to realize efficient TOPCon solar cells.

关 键 词：太阳电池 磁控溅射 电导率 氮化钛 TOPCon 

分 类 号：TK513[动力工程及工程热物理—热能工程]